Si, SiC & GaN
Power trends and the choice between Si, SiC and GaN
For power switching and supply applications, when should designers choose a WBG alternative, and how can they evaluate the trade-offs compared to silicon devices? There is no single answer, and in practice it depends on the requirements and commercial considerations of each use case. Some design engineers may be reluctant to adopt WBG devices, but the benefits often outweigh any disadvantages.
In this article, we will examine these issues, and the design challenges of some of the most critical power applications – and why you might choose silicon or WBG devices in each case.
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Combining GaN and SiC for cost-effective power conversion
Make no mistake, SiC and GaN can outperform silicon, but they do have limitations and discrete devices are currently more expensive than their silicon counterparts. There are operating conditions when they do outperform silicon, and where SiC is better than GaN (or vice versa). Knowing why becomes an important consideration.
There are practical difficulties with using wide bandgap devices to make cost-effective and reliable products. For the best overall result, OEMs should consider combinations of the technologies, even including silicon in the mix. This article evaluates some of the issues and solutions.
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When GaN is too fast for your application, consider SiC
In the world of semiconductor power switches, there is a belief that faster is better. Right now, Gallium Nitride (GaN) devices are the front-runners, with switching rates of over 100V/ns and 1A/ns. At these speeds, slewing from zero to, say, 400V in a typical power converter application takes just a few nanoseconds.
Using SiC MOSFETs at relatively low frequencies instead of GaN can make sense as dynamic losses are low anyway, especially if the circuit is a resonant type. In this case, the absence of reverse recovery losses in GaN is also not of value. Both GaN and SiC will have higher and approximately equal body conduction losses in reverse compared with a Si-MOSFET. SiC will also need some effort to slow down and control edge rates – it is still much faster than silicon – but it will be easier to tame.
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Practical GaN and SiC differences for EV onboard chargers
The debate continues around choosing wide bandgap (WBG) semiconductors over standard silicon, particularly in power conversion applications. The main advantage put forward is the higher switching efficiency of gallium nitride (GaN) and silicon carbide (SiC) devices.
As average selling prices approach parity, the main consideration may become the practical implementation. Is it viable to design power converters using both device types, and what would that do to the overall system cost?
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Whitepaper: GaN or SiC devices in High-Voltage switching technologies
“What do GaN and SiC bring to power electronics systems, that IGBT, MOSFET and Super Junction MOSFET don’t?”
This and "which type of WGB or module typology do I use most appropriately with which high-voltage switch technology in my application?" are probably the most frequently asked questions these days.
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Webinars
Wide bandgap semiconductor application testing, translating tests to operational reliability
Wide Bandgap semiconductors such as Silicon Carbide and Gallium Nitride-based power electronics are becoming commercially available across a large spectrum of voltages and current levels. However many customers still are reluctant to move their application designs towards utilizing the capabilities of these new devices.
In this Webinar we will show you how parametric testing and reliability investigations of these devices are done at ON Semiconductors and the importance of these tests for applications.
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Silicon Carbide devices and suitable gate drivers for industrial applications
In this session you will learn about the latest Silicon Carbide (SiC) devices from ST, as well as a short term technology roadmap.
In addition, some particularities of ST SiC MOSFETs will be discussed, including recommended gate driver device and circuitry, for optimal operation. Finally, Electrical Vehicle (EV) Chargers, one of the focus applications for SiC devices, will be presented in detail.
- SiC Devices: Product portfolio and Technology Roadmap
- Gate Driver for SiC MOSFETs
- Chargers for Electrical Vehicles: concepts, topologies and suitable power devices
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Powering Up
Learn more about the technologies shaping the future of vehicle electrification - choose from 6 sessions lead by some of our leading supplier partners including onsemi and STMicroelectronics.
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Podcasts
Episode 37: Unleashing the Power of Wind Energy
Hold on to your hats: In today’s episode, we discuss one of the fastest-growing renewable power sources: wind energy. Did you know that a single wind turbine has the potential to generate enough electricity to power 1,400 homes?
In this episode, we welcome Barry Thompson, CEO of Alpha 311.
We'll unpack how cutting-edge technologies and ingenious strategies are evolving in this sector, emphasizing the impact of IoT in enhancing turbine efficiency. Our discussion will also cover the ecological benefits of wind power and a forward-looking perspective on this form of renewable energy.
Episode 32: Revving Up for a Greener Future: EV Charging and V2G Technology
As the world moves towards a more sustainable future, electric vehicles are becoming increasingly popular, and the need for efficient and reliable charging infrastructure is growing Vehicle-to-grid Technology offers a solution that not only meets the energy needs but also benefits the electrical grid and helps reduce carbon emissions.
It also opens new business opportunities. So, let's dive into the exciting world of electric vehicle charging and see how it's shaping our future. Our guest this week: Henri Trintignac, CEO of Gulplug.
Episode 23: The Future of EV Charging
Electric vehicles or EVs are cool, but there are still twists in the road to market maturity. From accessibility and standardization issues to a lack of convenient and secure payment methods at charging stations, these could still throw a spoke in the wheel of electromobility. We are joined by Thomas Wagner of in-tech GmbH, a pioneer smart charging company based in Leipzig, and Thomas Foj, Director Vertical Market EMEA at Avnet Silica, to talk about the future of EV Charging.
