Intelligent sensing and signal conditioning technology is critically important to ensure optimal system operation. Accurate monitoring of major parameters such as voltage, current, and temperature enable systems to react appropriately to potentially damaging events.
Featured products
| Featured products |
WPN |
Description |
| Digital and Optical Isolation |
NCID9211 |
High Speed Digital Isolator |
| FOD3184 |
Logic Output Optocoupler |
| Op-Amp and Comparator (Voltage Sense) |
NCS2333 |
Precision Operational Amplifier, Low Power, Zero-Drift, 30 µV Offset |
| NCS4333 |
Operational Amplifier, 30 µV Offset, 0.07 µV/°C, Low Power, Zero-Drift |
| NCS333 |
Low Power, Zero-Drift Operational Amplifier with 10 µV Offset |
| NCS21911/2/4 |
Precision Operational Amplifier, 2 MHz Bandwidth, Low Noise, Zero-Drift, 25 µV Offset |
| NCS2250 |
Comparator, High Speed, 50 ns, Low Voltage, Rail-to-Rail, Push-Pull |
| ADC |
NCD98010 |
12-Bit Low Power SAR ADC Unsigned Output |
| Current Sense Amplifier |
NCS211R |
Current Sense Amplifier, 26V, Low-/High-Side Voltage Out, Bidirectional Current Shunt Monitor |
| NCS214R |
Current Sense Amplifier, 26V, Low-/High-Side Voltage Out, Bidirectional Current Shunt Monitor |
| Temperature Sense |
CAT34TS00VP2GT4 |
1.8 V Digital Temperature Sensor |
| N34TS04MT3ETG |
EEPROM Digital Output Temperature Sensor with On-board SPD |
| Voltage Reference |
TL431 |
Voltage Reference, Programmable Precision, Shunt Regulator |
Comparison of isolation techniques
| Attribute |
>Opto-Coupler |
>On-chip Magnetic |
>On-chip Capacitive |
>Digi-Max™ Off-chip Capacitive |
| Isolated Materials |
Epoxy/Silicone gel |
Polyimide |
SiO2 or equivalent |
Ceramic Substrate / Epoxy |
| Signal Coupling |
Optical (LED +diode) |
Magnetic field |
Electric field |
Electric field |
| Performance Across Temp and Time |
Varies |
Consistent |
Consistent |
Consistent |
| Life Expectancy |
10+ Yrs |
20+ Yrs |
20+ Yrs |
20+ Yrs |
| Speed |
< 25MBit/s |
100+MBit/s |
100+MBit/s |
50MBit/s |
| Distance Through Insulation (DTI) |
> 400 µm |
~20 µm |
~20 µm |
> 500 µm |
| Meets EN60950 >0.4mm DTI |
Yes |
No |
No |
Yes |
| Common Mode Transient Immunity (CMTI) |
~25 kV/µs |
> 100 kV/µs |
> 100 kV/µs |
> 100 kV/µs |
| EMI - Susceptibility |
Non-issue - too slow |
Design techniques |
Signal level dependent |
Signal level dependent |
| EMC - Radiation |
Non-issue (light transmission) |
Design techniques |
Design techniques |
Design techniques |
| Junction Temperature |
Up to 125°C |
Wide range (150°C) |
Wide range (150°C) |
Wide range (150°C) |
| Standards |
UL1577 |
UL1577 |
UL1577 |
UL1577 |
| IEC60747-5-5 |
VDE0884-17 |
VDE0884-17 |
VDE0884-17 |
| Modulation Method for Internal Signal Xfer |
No modulation required |
On-Off Keying |
On-Off Keying |
On-Off Keying |
silica content library/home/products/product-highlights/onsemi-energy-storage-solutions/sensing-and-signal-conditioning/sensing and signal main (lc)
Sensing and Signal main (LC)
