Featured Product

STMicroelectronics STPOWER SiC MOSFETs

The real breakthrough in high voltage switching

Based on the advanced and innovative properties of wide bandgap materials, featuring very low RDS(on) per area, discover the advanced and innovative 3rd generation of SiC MOSFET technology products from STMicroelectronics. Devices combine low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction. These new families feature the industry’s highest temperature rating of 200 °C for improved thermal design of power electronics systems.

Win a free evaluation board

STEVAL-DPSTPFC1 evaluation board from ST

 

SiC MOSFETs in mass production

  • Gen3 650V, 900V and 1200V
  • Gen2 650V
  • Gen2 1200V
  • Gen1 1200V and 1700V
Commercial product VDS [V] RDS(on) Typ
@ 25 ºC [Ω]
(Vgs=18V)		 Id [A] Package (Status/ DS)
SCT027H65G3AG 650 0.029 60 H2PAK-7
SCT027W65G3-4AG HiP247-4
SCT040TO65G3 0.04 35 TO-LL
SCT040W65G3-4 0.045 30 HiP247-4
SCT055W65G3-4AG 0.058
SCTHS250N65G3 0.067 237 STPAK
SCT012W90G3-4AG 900 0.012 110 HiP247
SCT015W120G3-4AG 1200 0.015 129 HiP247-4
SCT025H120G3AG 0.027 55 H2PAK-7
SCT025W120G3-4AG 56 HiP247-4
SCT040H120G3AG 0.04 40 H2PAK-7
SCT040W120G3-4 HiP247-4
SCT070H120G3-7 0.063 30 H2PAK-7
SCT070HU120G3AG HU3PAK
SCT070W120G3-4 HiP247-4
650V Gen2
SiC MOSFET P/N		 VDS [V] RDS(on) Typ
@ 25 ºC [Ω]
(Vgs=18V)		 Id [A] Package (Status/ DS)
HiP247 HiP247-LL HiP247-4LL H2PAK-7L PowerFLAT
8x8 HV		 HU3PAK
Tj max= 200°C Tj max=
175°C		 Tj max=
175°C		  
SCTW90N65G2V 650 0.018 119 Buy at Farnell          
SCTWA90N65G2V   Buy at Farnell        
SCTWA90N65G2V-4     Buy at Farnell      
SCTH90N65G2V-7       Buy at Farnell    
SCTL90N65G2V         Buy at Farnell  
SCTW35N65G2V 650 0.55 45 Buy at Farnell          
SCTWA35N65G2V   Buy at Farnell        
SCTWA35N65G2V-4     Buy at Farnell      
SCTH35N65G2V-7       Buy at Farnell    
SCTL35N65G2V         Buy at Farnell  
1200V Gen2 SiC P/N VDS [V] RDS(on) Typ
@ 25 ºC [Ω]
(Vgs=18V) series		 Id [A] Package (Status/ DS )
HiP247 HiP247-4LL H2PAK-7L HU3PAK
Tj max= 200°C Tj max=
175°C		  
SCTW70N120G2V 1200 0.021 80 Buy at Farnell      
SCTWA70N120G2V-4   Buy at Farnell    
SCTH70N120G2V-7     Buy at Farnell  
SCTW60N120G2 0.040 52 Buy at Farnell      
SCTWA60N120G2-4   Buy at Farnell    
SCTH60N120G2-7     Buy at Farnell  
SCTW40N120G2V 0.070 40 Buy at Farnell      
SCTWA40N120G2V        
SCTWA40N120G2V-4   Buy at Farnell    
SCTH40N120G2V-7     Buy at Farnell  
1200 & 1700V Gen1
SiC MOSFET P/N		 VDS [V] RDS(on) Typ
@ 25 ºC [Ω]
(Vgs=20V)		 Id [A] Package (Status/ DS )
HiP247 HiP247-LL HiP247-4LL H2PAK-2L H2PAK-7L HU3PAK
Tj max= 200°C Tj max=
175°C		 Tj max=
175°C		  
SCT50N120 1200 0.052 65 Buy at Farnell          
SCTWA50N120   Buy at Farnell        
SCTWA50N120-4     Production /
DataSheet
Released/
Buy at Farnell		      
SCT30N120 0.080 40 Buy at Farnell          
SCTWA30N120   Buy at Farnell        
SCT30N120H       Buy at Farnell    
SCT20N120 0.169 20 Buy at Farnell          
SCTWA20N120   Buy at Farnell        
SCT20N120H       Buy at Farnell    
SCT10N120 0.520 10 Buy at Farnell          
SCTWA10N120   Buy at Farnell        
SCT1000N170 1700 1000 6 Buy at Farnell          
SCT20N170 0.064 25 Buy at Farnell          


The best Rds(on) vs Qg trade-off

SCT025W120G3-4AG

Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

Read More

SiC MOSFET reference designs (LC)

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Reference designs

Top side of the ST's STDES-VRECTFD evaluation board

STDES-VRECTFD

15 kW, three-level, three-phase Vienna rectifier with digital control for power factor correction
 

Read More

STDES-PFCBIDIR

15 kW, three-phase, three-level AFE bidirectional converter for industrial and electric vehicle DC fast charging applications

Datasheet

STDES-SICGPHU3

The testing board contains a half-bridge (HB) structure based on two high voltage SiC MOSFETs.
 

Databrief

Evaluation boards

STEVAL-DPSTPFC1

3.6 kW PFC totem pole with inrush current limiter reference design using TN3050H-12WY and SCTW35N65G2V

Read More

STEVAL-ISA211V1

100 W, ultra-wide range flyback converter based on L6566BH
 
 

Buy Now at Farnell

Resources

eDesignSuite

The eDesignSuite is a comprehensive set of easy-to-use design-aid utilities ready to help you streamline the system development process with a wide range of ST products

Learn More

SiC MOSFET Finder
 

The STPOWER MOSFET finder is a mobile application available for Android or iOS offering a user-friendly alternative to searching through the ST online product portfolio, driving the user along a smooth and simple navigation experience using portable devices.
 

Download Datasheet

Silicon & wide-bandgap power technology positioning

STPower SiC MOSFET Graph

Click here to enlarge the image

SiC MOSFET series positioning
 

STPower SiC MOSFET Graph

Click here to enlarge the image

Available packages

ST's STPOWER SiC MOSFET product offer is completed with the state-of-the art packages (HiP247, H2PAK-7, TO-247 long leads) specifically designed for automotive and industrial applications. In addition ST offers all necessary companion devices like isolated gate drivers to complete your power design.

PowerFLAT 8x8 HV H2PAK-7 HiP247 long leads HiP247 HiP247-4 HU3PAK STPAK TO-LL
PowerFLAT 8x8 HV package H2PAK-7 package TO247 long leads package TO-247 package TO247-4 package HU3Pak package STPAK package TO-LL package

 

Win a free STEVAL-DPSTPFC1 evaluation board

The STEVAL-DPSTPFC1 3.6 kW bridgeless totem pole boost circuit achieves a digital power factor correction (PFC) with inrush current limiter (ICL). It helps you to design an innovative topology with the latest ST power kit devices: a silicon carbide MOSFET (SCTW35N65G2V), a thyristor SCR (TN3050H-12WY), an isolated FET driver (STGAP2S) and a 32-bit MCU (STM32F334).

Submit the form below for a chance to win the STEVAL-DPSTPFC1 evaluation board.

 
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