Featured Product

STMicroelectronics STPOWER SiC Diodes

Boosting the performance of power converters

SiC diodes are high performance power Schottky rectifiers that feature a silicon carbide substrate. This wide bandgap material enables the design of 650V high-voltage Schottky diodes. They present unbeatable reverse recovery at turn-off and minimal capacitive turn-off behaviour which is independent of temperature. The very low VF series of 650V to 1200V Rectifiers offers the lowest diodes forward voltage drop for optimal efficiency, while 1200 V SiC diodes combine the lowest forward voltage (VF) with state-of-the-art forward surge current robustness.

The very high efficiency behaviour of SiC diodes coupled with ST’s high level of quality ensures the best results for your designs and applications. ST’s 650V SiC diodes take advantage of silicon carbide’s superior physical characteristics over Si only, with 4 times better dynamic characteristics and 15% less forward voltage (VF) versus the fastest 600 V silicon diode. 1200V diodes are ideal for use in high power applications such as solar converters, charging stations, OBC, power supplies, and motor drives.

Silicon & wide-bandgap power technology positioning

STPSC30G12

1200 V SiC Power Schottky Diode

The STPSC30G12 SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Thanks to the Schottky construction, no recovery is shown during turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

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ACEPACK™ SMIT package

Outstanding resistance to moisture and heat for automotive and industrial applications.

The ACEPACK™ SMIT package features a Direct Bond Copper (DBC) metal-isolation-metal substrate placed on the top side of the package to improve thermal coupling with heatsinks. This frees the circuit board PCB of silicon dissipation to allow lower temperature operation and higher design flexibility.

With its low electrical parasitic inductance and low thermal resistance, the package delivers a flexible internal DBC design that enables various electrical circuit solutions from single switch to multi-die topologies in the 1 to 50kW power range. Its molding compound offers outstanding resistance to moisture and heat for automotive and industrial applications.

Main characteristics:

  • High efficiency of the power converter (thanks to low forward conduction and switching losses)
  • High power integration with dual diodes for reduced PCB form factor
  • Significant reduction of power converter size and cost
  • Low EMC impact, for simplified certification and reduced time-to-market
  • Natural high robustness ensuring very high reliability

SiC rectifiers in mass production

  • 650V
  • 1200V
SiC Rectifiers P/N VRRM (V) IF (AV) VF (V) max (per diode)
@ I0 (TJ = 25 °C)		 Package Buy Now
STPSC10065DLF 650 10 A 1,45 PowerFLAT 8x8 HV Buy at Farnell
STPSC8065D 8 A TO-220AC and TO-220AC Ins Buy at Farnell
STPSC10065D 10 A Buy at Farnell
STPSC12065D 12 A Buy at Farnell
STPSC20065D 20 A Buy at Farnell
STPSC20065DI 20 A Buy at Farnell
STPSC20065GY-TR 20 A D2PAK Buy at Farnell
STPSC10065G2 10 A D2PAK HV  
STPSC12065G2 12 A Buy at Farnell
STPSC20065CWL 2 x 10 A TO-247 and TO-247 LL  
STPSC40065CW 2 x 20 A Buy at Farnell
STPSC2H065B 2 A 1,55 DPAK Buy at Farnell
STPSC4H065DLF 4 A PowerFLAT 8x8 HV Buy at Farnell
STPSC6H065DLF 6 A Buy at Farnell
STPSC8H065DLF 8 A Buy at Farnell
STPSC10H065DLF 10 A Buy at Farnell
STPSC4H065B 4 A 1,75 DPAK Buy at Farnell
STPSC6H065B 6 A Buy at Farnell
STPSC8H065B 8 A Buy at Farnell
STPSC10H065B 10 A Buy at Farnell
STPSC6TH13TI 2 x 3 A TO-220AB and TO-220AB Ins Buy at Farnell
STPSC8H065CT 2 x 4 A  
STPSC8TH13TI 2 x 4 A Buy at Farnell
STPSC10TH13TI 2 x 5 A Buy at Farnell
STPSC12H065CT 2 x 6 A Buy at Farnell
STPSC16H065CT 2 x 8 A Buy at Farnell
STPSC20H065CT 2 x 10 A  
STPSC4H065D 4 A TO-220AC and TO-220AC Ins Buy at Farnell
STPSC4H065DI 4 A Buy at Farnell
STPSC6H065D 6 A Buy at Farnell
STPSC6H065DI 6 A Buy at Farnell
STPSC8H065D 8 A Buy at Farnell
STPSC8H065DI 8 A  
STPSC10H065D 10 A Buy at Farnell
STPSC10H065DI 10 A Buy at Farnell
STPSC12H065D 12 A  
STPSC10H065G2 10 A D2PAK HV  
STPSC20H065CW 2 x 10 A TO-247 Buy at Farnell
SiC Rectifiers P/N VRRM (V) IF (AV) VF (V) max (per diode)
@ I0 (TJ = 25 °C)		 Package Buy Now
STPSC2H12D 1200 2 A 1,50 TO-220AC Buy at Farnell
STPSC5H12D 5 A Buy at Farnell
STPSC10H12D 10 A Buy at Farnell
STPSC10H12G-TR 10 A D2PAK Buy at Farnell
STPSC10H12GY 10 A Buy at Farnell
STPSC10H12B2 10 A DPAK HV Buy at Farnell
STPSC10H12G2 10 A D2PAK HV Buy at Farnell
STPSC10H12CWL 2x5 A TO-247 LL Buy at Farnell
STPSC15H12D 15 A TO-220AC Buy at Farnell
STPSC15H12G2 15 A D2PAK HV Buy at Farnell
STPSC15H12WL 15 A DO-247 LL Buy at Farnell
STPSC20H12CWL 2 x 10 A TO-247 LL Buy at Farnell
STPSC20H12G 20 A D2PAK Buy at Farnell
STPSC20H12G2 20 A D2PAK HV Buy at Farnell
STPSC20H12D 20 A TO-220AC Buy at Farnell
STPSC30G12WL(1) 30 A DO-247 LL Buy at Farnell
STPSC30H12CWL 2 x 15 A TO-247 LL Buy at Farnell
STPSC40H12CWL 2 x 20 A Buy at Farnell

(1) Based on latest technology optimization, this diode has an improved forward surge current capability, making it ideal for use in PFC, where this ST SiC diode boosts the performance in hard switching conditions while bringing robustness to the design. Its high forward surge capability ensures a good robustness during transient phases.

 

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