New Product Introduction

onsemi M3S 1200V Silicon Carbide (SiC) MOSFETs

SiC MOSFETs system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size

onsemi M3S 1200V SiC MOSFET in TO247-4L package

The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.

 

Features

  • TO247-4LD package for low common source inductance
  • 15V to 18V Gate Drive
  • New M3S technology: 22mohm RDS(ON) with low EON and EOFF losses
  • 100% Avalanche Tested

 

Benefits

  • Reduced EON losses
  • 18V for best performance; 15V for compatibility with IGBT driver circuits
  • Improved power density
  • Improved robustness to unexpected incoming voltage spikes or ringing

 

Applications

  • AC-DC Conversion
  • DC-AC Conversion
  • DC-DC Conversion

End products

  • UPS
  • Electric Vehicle Chargers
  • Solar Inverters
  • Energy Storage Systems

 

Product overview

Product Compliance Channel
Polarity		 Configuration Blocking
Voltage
BVDSS (V)		 ID(max) (A) RDS(on) Typ
@ 25°C (mΩ)		 Qg Total (C) Output Capacitance (C) Tj Max (°C) Package
type
NTH4L022N120M3S Pb-free/
Halide free/
non AEC-Q and PPAP		 N-Channel Single 1200 88 22 148 148 175 TO-247-4
NVH4L022N120M3S AEC Qualified/
PPAP Capable/
Pb-free/
Halide free		 N-Channel Single 1200 88 22 148 148 175 TO-247-4

 

BUY ONLINE AT FARNELL



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