Nexperia Silicon Carbide (SiC) MOSFETs & Diodes
SiC MOSFETs - Raising the bar for safe, robust and reliable power switching
Addressing the growing demand for high-power and high-voltage industrial applications, Nexperia’s Silicon Carbide MOSFETs, with their excellent RDSon temperature stability, fast switching speed, and high short-circuit ruggedness, make them the product of choice for E-vehicle charging infrastructure, photovoltaic inverters, and motor drives.
Key features
- Best-in-class RDSon temperature dependency
- Superior gate charge and beneficial gate charge ratio
- Ultra small threshold voltage tolerance
- Robust body diode with very low forward voltage
- Lower leakage current up to 1200 V
Benefits
- Very low switching losses
- Fast reverse recovery
- Fast switching speed
- Temperature independent turn-off switching losses
- Very fast and robust intrinsic body diode
Applications
- E-vehicle charging infrastructure
- Photovoltaic inverters
- Switch mode power supply
- Uninterruptable power supply
- Motor drives
Product portfolio
650 V SiC diodes for demanding power conversion applications
Merged PiN Schottky structure delivers maximum robustness and efficiency
Nexperia's 650 V Silicon Carbide diode for demanding power conversion applications which require ultra-high performance, low loss, and high efficiency. The 10 A, 650 V SiC Schottky diode is an industrial-grade part that addresses the challenges of demanding high voltage and high current applications. These include switched-mode power supplies, AC-DC and DC-DC converters, battery-charging infrastructure, uninterruptible power supplies and photovoltaic inverters and allow for more sustainable operations. Data centers, for example, equipped with power supplies designed using Nexperia's PSC1065K SiC Schottky diode will be better placed to meet rigorous energy efficiency standards than those using solely silicon-based solutions.
Key features
- Zero forward and reverse recovery
- Temperature independent switching performance
- Fast and smooth switching performance
- High IFSM capability
- Low leakage current
- Easy to parallel / positive temperature coefficient
- Outstanding figure-of-merit (Qc x VF )
- Thermal stability up to 175°C junction temperature
- AEC-Q101 qualification
Benefits
- High power density
- Reduced system cost
- System miniaturization
- High temperature operation
- Reduced EMI
- Increased ruggedness and reliability
Applications
Industrial and consumer
- Switch Mode Power Supply (SMPS)
- AC-DC and DC-DC converters
- Battery charging infrastructure
- Server and telecom power supply
- Uninterruptible Power Supply (UPS)
- Photovoltaic inverters
Automotive
- On-Board Chargers (OBC)
- Inverters
- High voltage DC-DC converters
Product portfolio
silica content library/npi/nexperia/sic-mosfets-diodes
Nexperia Silicon Carbide (SiC) MOSFETs and Diodes | Avnet Silica
