STMicroelectronics TSB582
TSB582 - 200 mA output current with thermal shutdown and output current limiter, 3.1 MHz, 36 V, BiCMOS dual operational amplifier
The TSB582 is a unity gain stable, dual operational amplifier with high voltage and high current capability, featuring internal protections against overtemperature and current overload conditions. In addition, the TSB582 has enhanced ESD and RF noise immunity.
It typically outputs up to 200 mA per channel to drive low resistance inductive loads such as angle resolvers, lineout cables and piezo actuators.
The two high current output amplifiers of the TSB582 feature the advantage of driving loads directly in bridge tied mode or, connected in parallel, allow to double the output sink/source current. Additionally, the TSB582 is available in the two space-saving packages, SO8 with exposed pad and DFN8 with wettable flanks and exposed pad. Where both of them are qualified for automotive applications over a temperature range of -40 °C to +125 °C.
Features
- Wide supply voltage: 4 V - 36 V
- High output current 200 mA
- Rail-to-rail output, low rail input
- Gain bandwidth product: 3.1 MHz
- High slew rate: 2 V/µs
- Internal thermal shutdown & output current limiter
- Enhanced RF noise immunity
- High tolerance to ESD: 4 kV HBM
- Extended temperature range: -40 °C to 125 °C
- Automotive grade
- Low noise 45 nV/√Hz @ 1 kHz
- Icc (typ.) = 2.3 mA
- Unity gain stable
- Low offset 2.4 mV max. (25 °C) / 3 mV max. (full temperature range)
- Low input bias current
- Packages: SO8 & DFN8 exposed pad
silica content library/npi/2024/stmicroelectronics-tsb582
STMicroelectronics TSB582 200 mA output current BiCMOS dual Op-Amp | Avnet Silica
