New Product Introduction

STMicroelectronics SCT040TO65G3

SCT040TO65G3 - Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package

STMicroelectronics SiC Power MOSFET in a TO-LL package

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

 

Features & benefits

  • Very fast and robust intrinsic body diode
  • Very low RDS(on) over the entire temperature range
  • High speed switching performances
  • Source sensing pin for increased efficiency

 

Applications

  • Switching mode power supply
  • DC/DC converter for EV/HEV

 

 

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