Infineon CoolSiC™ solutions maximize competitive advantage by reducing costs, overcoming design challenges and boosting performance reliability.With 30 years of experience in silicon carbide (SiC) technology development, Infineon’s portfolio addresses customer needs for smarter, more efficient energy generation, transmission and consumption. Infineon supplies all leading power technologies: silicon (Si), SiC, gallium nitride (GaN) and GaN-on-Si and is a pioneer in the commercial use of SiC technology. The portfolio includes CoolSiC™ Schottky diodes, CoolSiC™ hybrid devices, CoolSiC™ MOSFET modules and discretes, plus EiceDRIVER™ gate driver ICs for driving SiC devices.
EBV and Infineon podcast: CoolSiC™ special edition
Infineon CoolSiC™ MOSFETs Generation 2
Explore how the new CoolSiC™ MOSFET G2 trench MOSFET enables a new level of SiC performance, while meeting the highest quality standards in all common combinations of power schemes: AC-DC, DC-DC and DC-AC.
Paving a sustainable path to customer success with CoolSiC™
Watch how EBV's customer Stercom has successfully implemented Infineon's SiC modules in their on-board chargers to help advance ev-charging technology and create a more sustainable future.
WEBINAR: Energy storage systems powered by CoolSiC™ - Realizing efficiency from grid to battery
In this webinar, you will get a deeper insight into Infineon's comprehensive solution offering for Energy Storage Systems, with a focus on silicon carbide and its important contribution to reducing losses by 50%. You will also get an overview of the structure of energy storage systems and learn more about topologies and implementation approaches.
On-demand
WEBINAR: High Power UPS with CoolSiC™ from Infineon
In this webinar you will learn what benefits silicon carbide offers for high power converters like UPS systems. Detailed application examples will show you how CoolSiC™ can help your design become more efficient and compact and why these are key factors for successful UPS applications in the market.
On-demand
WEBINAR: CoolSiC™ and EiceDRIVER™ - The perfect solution for servo drives
Controlling servo drives, managing power requirements and ensuring fail-safe operation can be challenging, especially as efficiency demands increase. Dealing with overload and short-circuit conditions is also a must. In this webinar, we will discuss how Infineon's CoolSiC™ MOSFETs support the transition to more efficient servo drives and how EiceDRIVER™ gate drivers ensure proper protection.
On-demand
WEBINAR: Application trends in fast EV charging
Join experts from Infineon and EBV for an in-depth discussion of fast DC electric vehicle (EV) charging solutions and applications.
On-demand
CoolSiC™ by application
Clean energy, energy efficiency and electric mobility drive demand for new power semiconductor solutions. SiC could be an answer to some of these challenges by providing more energy from clean resources.
Most of the applications surrounding us today are based on silicon (Si). But those applications call for advances in efficiency, power density and new ways to overcome silicon’s performance limitations. SiC technology has reached the tipping point in some applications. Today, designers looking to stay competitive and lower long-term system costs are turning to SiC-based technologies.
Some of the most popular applications include:
Includes: whitepapers, application brochures and guides, microlearnings, and product guides
Energy Storage Systems (ESS)
CoolSiC™ MOSFET 650 V and 1200 V are cutting losses by 50% for extra energy. As the battery bank makes up the major portion of the total system costs for Energy Storage Systems, a change from silicon superjunction MOSFET to CoolSiC™ MOSFET can lead to approximately 2% extra energy without increasing battery size.
Electric Vehicle (EV) Charging
CoolSiC™ MOSFETs reduce charging time by half at the same charging station and footprint. One 1200 V SiC MOSFET is sufficient to support a DC-link voltage of 800 V. Doubling the power density allows a component count reduction of a comparable Si solution by 50% thanks to doubled voltage in the switch positions.
Industrial Drives
CoolSiC™ MOSFET powers the next generation of servo drive design. Up to 80% loss reduction compared to Si IGBT solution is possible thanks to resistive behavior of SiC MOSFET and the load profile of servos is a perfect match.
Switch mode power supply (SMPS) for industry
CoolSiC™, CoolMOS™ and EiceDRIVER™ for energy-smart SMPS designs combine in industrial applications like telecom datacenter. Industrial SMPS are driven by the trends of improved energy efficiency, high power density and ever-growing output power. Wide-bandgap materials enable the move to high-performance topologies.
Automotive Powertrain
For EV traction inverter, more efficiency and right performance are key. CoolSiCTM can gain up to 4% efficiency over its IGBT counterpart, by combining IGBT and SiC, Infineon offers the best scalability in market, customers can therefore reduce platform migration effort and eventually achieve fast time to market. For On-board-charger, fast and bi-directional charging is setting the trend, Infineon CoolSiCTM offers best in class performance in 1200 V and supports various topologies.
Fast DC EV charging - whitepaper
Realizing the future of fast EV charging through CoolSiC™
Charging the electric vehicle while grabbing a coffee sounds like a myth? As the EV market is set to grow exponentially, massive investment plans in new vehicle models and infrastructure are pushed by government initiatives.
Enter to win the EVAL-1ED3142MU12F-SiC
Register now to win this entry-level evaluation kit designed to evaluate
the functionality and capability of two 1200 V CoolSiC™ MOSFETs
and Infineon’s new 1ED3142 gate driver IC in a half-bridge
configuration. Comes with the EVAL-PSIR2085 isolated
power supply board to get you up and running quickly!
Infineon CoolSiC™ Schottky Diodes
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1200 V CoolSiC™ Schottky diode G5 in TO247-2 package 1200 V CoolSiC™ Schottky diodes G5 now available in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes commonly used today. |
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CoolSiC™ Automotive Schottky G5 and G6 diodes CoolSiC™ Automotive Schottky G5 and G6 Diode series represent Infineon's leading-edge technology for Silicon Carbide Schottky Barrier diodes. |
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650V CoolSiC™ New 650 V CoolSiC™ Hybrid Discrete in TO263-7 package for Automotive enables performance boost with best cost ratio for fast switching on-board charger applications. |
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CoolSiC™ Hybrid discrete The combination of a best-in-class fast-switching IGBT with a very reliable SiC Diode builds a perfect cost-performance trade-off for hard-switching topologies. |
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650 V Hybrid CoolSiC™ IGBT devices The new 650 V hybrid CoolSiC™ IGBT device combines key benefits of the best in class 650 V TRENCHSTOP™5 IGBT technology and unipolar structure of co-packed Schottky barrier CoolSiC™ diode. |
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CoolMOS™ G7 and CoolSiC™ G6 for high power applications The benefits of the already existing high voltage technologies 600 V CoolMOS™ G7 superjunction (SJ) MOSFET and CoolSiC™ Schottky diode 650 V G6 get combined with the innovative concept of top-side cooling. |
Infineon CoolSiC™ Hybrid devices
| IMAGE | PRODUCT |
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650V CoolSiC™ New 650 V CoolSiC™ Hybrid Discrete in TO263-7 package for Automotive enables performance boost with best cost ratio for fast switching on-board charger applications. |
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CoolSiC™ Hybrid discrete The combination of a best-in-class fast-switching IGBT with a very reliable SiC Diode builds a perfect cost-performance trade-off for hard-switching topologies. |
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650 V Hybrid CoolSiC™ IGBT devices The new 650 V Hybrid CoolSiC™ IGBT device combines key benefits of the best in class 650 V TRENCHSTOP™5 IGBT technology and unipolar structure of co-packed Schottky barrier CoolSiC™ diode. |
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EasyPACK™ CoolSiC™ The FS3L200R10W3S7F_B94 is a three-level bipolar boost module in Easy 3B housing. It features a CoolSiC™ Schottky diode as well as a 950 V TRENCHSTOP™ IGBT7 chip. |
Infineon CoolSiC™ MOSFETs Discretes
| IMAGE | PRODUCT |
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CoolSiC™ MOSFET The EasyPACK™ and EasyDUAL™ 1B and 2B in various topologies with CoolSiC™ MOSFET enhanced generation 1 are suitable for 1200 V applications and come with PressFIT contact technology and NTC. |
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CoolSiC™ MOSFETs 1200 V G2 The CoolSiC™ G2 1200 V family in a D²PAK-7L (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. |
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Automotive CoolSiC™ MOSFETs Infineon expands its Automotive CoolSiC™ MOSFETs portfolio with the SiC 1200 V discrete in TO247-4L package, with best-in-class switching performance for OBC and DC-DC applications. |
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CoolSiC™ MOSFET discrete 650V The CoolSiC™ MOSFET discrete 650 V in TOLL (HSOF-8) package leverages the strengths of the Infineon CoolSiC™ technology. |
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1200 V CoolSiC™ MOSFET CoolSiC™ 1200 V SiC MOSFET low-ohmic range, 7 mΩ, 14 mΩ and 20 mΩ, in TO247 package is built on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. |
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CoolSiC™ MOSFET 650V CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. |
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1200 V CoolSiC™ MOSFET The CoolSiC™ MOSFET for Automotive family shows exceptional performance, quality, and reliability in the onboard charger and DC-DC applications in hybrid and electric vehicles. |
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CoolSiC™ The CoolSiC™ 2000 V SiC MOSFET family, available in TO-247PLUS-4-HCC package and ranging between 12 - 100 mΩ along with the matching diode portfolio ranging between 10 - 80 A, have been designed to offer increased power density without compromising the system’s reliability. |
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CoolSiC™ MOSFET 750 V G1 The new CoolSiC™ MOSFET 750 V G1 is a highly robust SiC MOSFET family for the best system performance and reliability. |
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CoolSiC™ MOSFETs 650 V CoolSiC™ MOSFETs 650 V are built on a state-of-the-art trench semiconductor process, optimized for the lowest losses in the application and the highest reliability in operation without any compromise. |
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CoolSiC™ MOSFET discrete 650V CoolSiC™ technology leverages the strong physical characteristics of silicon carbide, adding unique features which increase the device performance, robustness and ease-of-use. |
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CoolSiC™ MOSFETs 1200 V Infineon presents CoolSiC™ MOSFET 1200 V class in a new D2PAK-7L package. A broad RDS(ON) portfolio of 30 mΩ up to 350 mΩ enables top efficiency in a wide power range of industrial power supplies, chargers, as well as various Ampere ratings in servo drives. |
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Automotive CoolSiC™ MOSFETs The Automotive CoolSiC™ MOSFETs has been developed for current and future On-Board Charger and DC-DC applications in hybrid and electric vehicles. |
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CoolSiC™ MOSFETs 1700 V Infineon's first SiC MOSFET portfolio in 1700 V class is targeting the auxiliary power supply circuit, which generates power for control logic, displays, and cooling fans, in three-phase power systems. |
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1200 V CoolSiC™ discrete MOSFETs in TO247-3 and TO247-4 The new discrete portfolio is rated from 30 mΩ up to 350 mΩ and fits for 3-phase power systems ranging from about 1 kW to 80 kW. |
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1200 V CoolSiC™ MOSFETs (45 mΩ) The 1200 V CoolSiC™ MOSFETs (45 mΩ) in TO247-3/-4 package is built on a state-of-the-art trench semiconductor process, optimized to combine performance with reliability. |
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CIPOS™ Maxi SiC IPM - IM828-XCC High-performance CIPOS™ Maxi transfer molded silicon carbide IPM IM828-XCC integrates 6 CoolSiC™ MOSFETs with an optimized 1200 V 6-channel SOI gate driver to increase reliability, provide excellent protection, and optimize PCB size and system costs. |
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CoolMOS™ G7 and CoolSiC™ G6 for high power applications The benefits of the already existing high voltage technologies 600 V CoolMOS™ G7 superjunction (SJ) MOSFET and CoolSiC™ Schottky diode 650 V G6 get combined with the innovative concept of top-side cooling. |
Infineon CoolSiC™ MOSFETs Modules
| IMAGE | PRODUCT |
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Easy modules EasyDUAL™ 2B CoolSiC™ MOSFET half-bridge module for 1200 V applications with PressFIT contact technology, integrated NTC temperature sensor and Thermal Interface Material. |
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EasyPACK™ CoolSiC™ The FS3L200R10W3S7F_B94 is a three-level bipolar boost module in Easy 3B housing. It features a CoolSiC™ Schottky diode as well as a 950 V TRENCHSTOP™ IGBT7 chip. |
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CoolSiC™ MOSFET The EasyPACK™ and EasyDUAL™ 1B and 2B in various topologies with CoolSiC™ MOSFET enhanced generation 1 are suitable for 1200 V applications and come with PressFIT contact technology and NTC. |
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HybridPACK™ Drive CoolSiC™ The HybridPACK™ Drive is a very compact six-pack module, available in two variants with different chip counts 1200 V/400 A (8 chips per switch) and 1200 V/200 A (4 chips per switch), optimized for hybrid and electric vehicles. |
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EasyPACK™ 3B CoolSiC™ The DF4-19MR20W3M1HF_B11 is the first 2000 V CoolSiC™ MOSFET power module in an EasyPACK™ 3B housing. |
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CoolSiC™ MOSFET power modules The EasyPACK™ and EasyDUAL™ power modules are the lead types with enhanced generation 1 CoolSiC™ MOSFET (M1H). |
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EasyPACK™ CoolSiC™ Automotive MOSFET EasyPACK™ 1B is a 7.33 mΩ half-bridge module combining the new CoolSiC™Automotive MOSFET 1200V technology, an NTC temperature sensor, and the proven PressFIT contact technology. |
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3-level 1200 V CoolSiC™ MOSFET module The F3L11MR12W2M1_B65 is the new 11 mΩ 3-level module with CoolSiC™ MOSFET, NTC and PressFIT Contact Technology. It extends the EasyPACK™ 2B family with a 3-level Active Neutral Point Clamped (ANPC) topology. |
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Easy 1B, 2B - CoolSiC™ MOSFET power modules Easy power modules with CoolSiC™ MOSFET open up new opportunities for inverter designers to realize never before seen levels of efficiency and power density. |
| DF11MR12W1M1&DF23MR12W1M1 easy 1B booster topology DF11MR12W1M1 & DF23MR12W1M1 are the lead products based on the CoolSiC™ MOSFET technology |
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CoolSiC™ for EV-charging The EasyPACK™ CoolSiC™ MOSFETs in H-bridge topology and the EasyBRIDGE rectifier modules are the perfect fit for scalable DC EV charger designs with up to 75 kW. |
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EasyDUAL™ CoolSiC™ MOSFET Our new EasyDUAL™ CoolSiC™ MOSFET modules in a half-bridge configuration were updated with a new aluminum (AlN) ceramic. |
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EasyPACK™ CoolSiC™ MOSFET The new F3L8MR12W2M1HP_B11 in ANPC topology is developed with the aim to support customers in their fast-growing applications. |
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CoolSiC™ MOSFET 62 mm module CoolSiC™ MOSFETs reduce the system complexity leading to lower system cost and size in mid to high power systems. |
Infineon CoolSiC™ Evaluation Boards
| IMAGE | PRODUCT |
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CoolSiC™ MOSFET EVAL Boards Infineon offers Evaluation Boards for motor drive applications, either with CoolSiC MOSFET Modules or as a discrete solution. |
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Entry-level CoolSiC™ kit Entry-level CoolSiC™ evaluation kit gives you an easy entry point for verifying save and fast switching of CoolSiC™. |
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CoolSiC™ MOSFET Evaluation board The EVAL-M5-E1B1245N-SiC is a complete evaluation board including a 3-phase CoolSiC™ MOSFET power module for motor drive applications. |
Explore More:
Innovative Passive Components to Optimise Your SiC Designs
Wide bandgap (WBG) semiconductors using SiC and GaN materials offer the promise of greater power efficiency and smaller sized power circuits. These innovative new technologies operate at higher voltages, frequencies and temperatures, presenting new challenges for capacitors and magnetic components.
Passive components manufacturers are responding with product specifications to fully exploit these wide band-gap semiconductor innovations, with higher current ratings, operating temperatures and dv/dt.
Contact us
Talk with an EBV SiC expert to learn how to explore SiC to meet your long-term system cost savings and other design goals that drive better reliability and performance.
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