New Product Introduction

Infineon Technologies CoolSiC™ MOSFET discrete 650V

In TOLL package

Infineon Technologies CoolSiC™ MOSFET discrete 650V product image

CoolSiC™ technology leverages the strong physical characteristics of silicon carbide, adding unique features which increase the device performance, robustness and ease-of-use.

The CoolSiC™ MOSFETs 650 V are built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation. 

CoolSiC™ in TOLL is used for more power density and easier assembly.

 

Key features

  • Low device capacitances
  • Temperature independent switching losses
  • Intrinsic diode with low reverse recovery charge
  • Threshold-free on-state characteristics

 

Additional features

  • Small form factor
  • Low parasitic inductance and lower case temperature
  • .XT interconnect for lower Rth and Zth
  • Superior GOX reliability
  • Low dependency of RDS(on) with temperature
  • Works with standard MOSFET gate-driver ICs

 

Applications

  • Energy storage
  • Battery fromation
  • Solar
  • Industrial SMPS
  • Telecom
  • Server

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