New Product Introduction

Infineon Easy 1B, 2B - CoolSiC™ MOSFET power modules

Easy power modules with CoolSiC™ MOSFET open up new opportunities for inverter designers to realize never before seen levels of efficiency and power density

Infineon Easy 1B, 2B - CoolSiC™ MOSFET product image

Easy power modules with CoolSiC™ MOSFET open up new opportunities for inverter designers to realize never before seen levels of efficiency and power density. 

Combining the strengths of the Easy power modules, that set a benchmark in low stray inductance, with the strengths of Infineon’s 1200V CoolSiC™ MOSFET chip enables our customers to reduce system and operational costs significantly.


Key features

  • About 80% lower switching losses compared to Si
  • Low conduction losses due to linear output characteristic
  • Broadest portfolio of CoolSiC™ MOSFET in Easy package on the market
  • Superior gate oxide reliability

 

Additional features

  • Intrinsic body diode with low reverse recovery charge
  • Highest threshold voltage of Vth > 4 V
  • Specified short circuit capability of 2µs
  • Reduced system costs since 2-3 times higher switching frequencies are possible. Reduced operational costs due to higher efficiency
  • Tailoring inverter design to application needs due to 3 different available topologies
  • Longer lifetime and better long term stability of inverter system
  • Increased power density
  • Highest robustness against parasitic turn-on
  • Ready to use for applications with SC requirement

 

Applications

  • Solar
  • UPS
  • Energy storage
  • EV-Charging
  • Medical


Available tools


EVAL-1EDC20H12AH-SIC:
Gate Driver, SiC MOSFET

1EDC20H12AH and CoolSiC™ MOSFET IMZ120R045M1 were developed to demonstrate the functionality and key features of the Infineon EiceDRIVER™ and Infineon CoolSiC™ MOSFET. 1EDC20H12AH is certified according to UL 1577 with VISO = 2500 V for 1 min.

Half-bridge SiC MOSFET with gate driver and over-current protection

 

EVAL-PS-E1BF12-SIC:
MOSFET

This board has the purpose to enable the evaluation of the FF11MR12W1M1_B11 and FF23MR12W1M1_B11 CoolSiC™ MOSFET modules.

For evaluation of the FF11MR12W1M1_B11 and FF23MR12W1M1_B11 CoolSiC™ MOSFET modules

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