Infineon Technologies CIPOS™ Maxi SiC IPM - IM828-XCC
High-performance CIPOS™ Maxi transfer molded silicon carbide IPM IM828-XCC integrates 6 CoolSiC™ MOSFETs
High-performance CIPOS™ Maxi transfer molded silicon carbide IPM IM828-XCC integrates 6 CoolSiC™ MOSFETs with an optimized 1200 V 6-channel SOI gate driver to increase reliability, provide excellent protection, and optimize PCB size and system costs.
The smallest and most compact package in the 1200 V class, this IPM combines a power rating in excess of 8 kW with exceptional power density, reliability, and performance. It offers excellent protections such as under-voltage lockout on all channels, all switches turn off during protection, cross-conduction prevention, over-current protection, temperature monitoring.
Key features
- Fully isolated dual inline molded module with DCB
- 1200 V CoolSiC™ MOSFET
- Rugged 1200 V SOI gate driver technology
- Integrated bootstrap functionality
Additional features
- Overcurrent shutdown
- Undervoltage lockout on all channels
- Turnoff of all six switches during protection
- Cross-conduction prevention
- Allowable negative VS potential up to -11 V for signal transmission at VBS=15 V
- Low-side emitter pins accessible
Additional benefits
- Smallest package size in 1200 V IPM class with the high power density and excellent performance
- Gate driver technology with enhanced robustness for excellent protection
- High efficiency up to 99%
- Wide switching speed range up to 80 kHz
- Adapted to fast-switching applications with lower power losses
- Simplified design and manufacturing
Applications
- 3-phase PFC
- Pumps
- Active filter (active power factor correction) for HVAC
- Low-power general purpose drives (GPI, servo drives)
ebv content library/npi/2020/infineon-cipos-maxi-sic-ipm-im828-xcc
Infineon Technologies CIPOS™ Maxi SiC IPM - IM828-XCC | EBV Elektronik
