Infineon Technologies EasyDUAL™ CoolSiC™ MOSFET
EasyDUAL™ CoolSiC™ MOSFET power module 1200 V
Our new EasyDUAL™ CoolSiC™ MOSFET modules in a half-bridge configuration were updated with a new aluminum (AlN) ceramic. This advanced material will support customers in high power density applications like Solar, UPS, traction auxiliary inverters, or even ESS and EV Charger.
The newest solutions with AlN ceramic come in a half-bridge configuration with 11 mΩ Rdson in Easy 1B package and 6mOhm Rdson in Easy 2B package.
Customers will benefit in different directions from the new high-performance ceramic. Most important is the improvement of the Rthjh by 40%, which will increase the output power or further improve the lifetime.
Key features
- PressFIT technology
- 1200 V CoolSiC™ trench MOSFET technologEasy 1B, 2B module packages
- Half-bridge configuration
- High performance aluminum nitride ceramic
Additional features
- Easy design-in
- High degree of freedom for the inverter designer
- Better thermal conductivity of the DCB material
- Superior gate-oxide reliability
- Power density and compact design
- Minimization of the cavity between module and heat sink
Applications
- UPS
- Solar
- Energy storage systems
- EV charger
- Traction auxiliary inverters
ebv content library/npi/2021/infineon-easydual-coolsic-mosfet
Infineon Technologies EasyDUAL™ Cool SiC™ MOSFET | EBV Elektronik
