Infineon Technologies CoolSiC™ MOSFETs 1200 V G2

D²PAK-7 package

The CoolSiC™ G2 1200 V family in a D²PAK-7L (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation, and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.

 

Key features

• Very low switching losses
• Overload operation up to T_vj = 200°C
• Short circuit withstand time 2 µs
• Benchmark gate threshold voltage, V_GS(th) = 4.2 V

 

Additional features

• Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
• Robust body diode for hard commutation
• .XT interconnection technology for best-in-class thermal performance

 

Applications

• String inverter
• Online UPS / Industrial UPS
• General purpose drives (GPD)

 

ebv content library/npi/2024/infineon-technologies-coolsic-mosfets-1200v-g2 Infineon Technologies CoolSiC™ MOSFETs 1200 V G2 | EBV Elektronik