Infineon Technologies 650 V Hybrid CoolSiC™ IGBT devices

New 650 V Hybrid CoolSiC™ IGBT device combines benefits of the best in class 650 V TRENCHSTOP™5 IGBT technology and unipolar structure of co-packed Schottky

The new 650 V Hybrid CoolSiC™ IGBT device combines key benefits of the best in class 650 V TRENCHSTOP™5 IGBT technology and unipolar structure of co-packed Schottky barrier CoolSiC™ diode. The use of a Schottky barrier diode as a freewheeling diode co-packed with IGBT allows to extend the capabilities of IGBT and enables a significant reduction in Eon and overall switching losses. Fast and easy upgrade of 650 V TRENCHSTOP™5 IGBT designs with Hybrid CoolSiC™ IGBT brings efficiency improvement of 0.1% for each 10 kHz switching frequency. 

 

Key features

• Very low ON-state losses
• Benchmark switching IGBT in hard switching topologies
• Highest efficiency
• Reduced cooling effort

 

Additional features

• Ultra-low switching losses due to the combination of TRENCHSTOP™ 5 and CoolSiC™ diode technology
• Increased power density
• Plug & play replacement of the pure silicon devices
• Easy upgrade of existing designs for higher efficiency
• Excellent for paralleling

 

Applications

• Industrial UPS
• Industrial SMPS
• Solar String Inverter
• Energy Storage
• Charger

ebv content library/npi/2020/infineon-650-v-hybrid-coolsic-igbt Infineon Technologies 650 V Hybrid Cool SiC™ IGBT devices | EBV Elektronik