Infineon Technologies CoolSiC™ MOSFET discrete 650V
TOLL package, 107 mΩ IMT65R107M1HXTMA1
The CoolSiC™ MOSFET discrete 650 V in TOLL (HSOF-8) package leverages the strengths of the Infineon CoolSiC™ technology. The small form factor and low parasitic of the TO-leadless (TOLL) package allow for an even more efficient and effective usage of PCB space as well to drive the MOSFET at higher frequencies, reaching higher power density. The reduction of thermal impedance compare to D²PAK package, together with the innovative .XT interconnect technology, makes the CoolSiC™ MOSFET 650 V in TOLL products suitable for high to mid power systems, optimizing the performance per $.
Key features
- Small form factor
- Thermal impedance reduction
- .XT interconnect
- Low parasitic inductance
Additional features
- Industry standard package - JEDEC industrial applications qualified (J-STD20 and JESD22)
- Kelvin source connection
- MSL1 (or MLS2) compliant
- Thermal improvement over D²PAK and similar to TO-220
- Suitable for wave or reflow soldering
- Totally Pb free
- TOLL already a high runner in CoolMOS™ and CoolGaN™
Applications
- Datacenter power
- Telecom
- Industrial SMPS
- Solar inverters
- Energy storage systems
- Battery formation
- Motor driver
- Home appliances
- Online UPS
ebv content library/npi/2024/infineon-technologies-coolsic-mosfet-discrete-650v
Infineon Technologies CoolSiC™ MOSFET discrete 650 V | EBV Elektronik
