New Product Introduction

Infineon Technologies 1200 V CoolSiC™ MOSFET

1200 V CoolSiC™ MOSFET for automotive

Infineon Technologies XENSIV TLE4999C8 product image

The CoolSiC™ MOSFET for Automotive family shows exceptional performance, quality, and reliability in the onboard charger and DC-DC applications in hybrid and electric vehicles. The devices are specifically designed to meet the high requirements demanded by the automotive industry with regards to reliability, quality, and performance.

 

Key features

  • Revolutionary semiconductor material - Silicon Carbide (SiC)
  • Very low switching losses
  • Threshold-free on state characteristic
  • IGBT-compatible driving voltage (15 V for turn-on)

 

Additional features

  • 0 V turn-off gate voltage
  • Benchmark gate threshold voltage, VGS(th)=4.5 V
  • Fully controllable dV/dt
  • Commutation robust body diode, ready for synchronous rectification
  • Temperature independent turn-off switching losses

Additional benefits

  • Efficiency improvement
  • Enabling higher frequency
  • Increased power density
  • Cooling effort reduction
  • Reduction of system complexity and cost

 

Applications

  • On-board charger/PFC (uni- and bi-directional charging)
  • Booster/DC-DC converter
  • Auxilliary inverter 

Order samples at Farnell

 

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