Infineon Technologies 1200 V CoolSiC™ MOSFET

1200 V CoolSiC™ MOSFET low - ohmic range

CoolSiC™ 1200 V SiC MOSFET low-ohmic range, 7 mΩ, 14 mΩ and 20 mΩ, in TO247 package is built on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. The latest CoolSiC™ MOSFETs have the best-in-class thermal dissipation performance benefited from the .XT interconnection technology.

CoolSiC™ MOSFETs are ideal for hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.

 

Key features

• Lowest R_DS(ON) 7 mΩ in TO247
• .XT interconnection technology for best-in-class thermal performance
• Maximum gate-source voltage lowered to -10 V
• Flexible turn-off gate voltage selection -5 V ~ 0 V

 

Additional features

• Avalanche and short-circuit capability
• Highest power density from single device, leading typical single device output power at 30 kW
• 15% improvement on thermal dissipation capability
• Easy to design and apply
• Enhance robustness and reliability

 

Applications

• FAST EV Charging
• Solar energy system
• Energy storage system
• Industrial Drives

 

 

ebv content library/npi/2022/infineon-technologies-1200v-coolsic-mosfet-low-ohmic-range Infineon Technologies 1200 V CoolSiC™ MOSFET | EBV Elektronik