Infineon Technologies EasyPACK™ CoolSiC™ MOSFET
3-level ANPC power module 1200 V - F3L8MR12W2M1HP_B11
The new F3L8MR12W2M1HP_B11 in ANPC topology is developed with the aim to support customers in their fast-growing applications. Compared to the predecessor F3L11MR12W2M1_B74, the silicon diode has an increased current rating. This supports the entire cos φ range and makes this module the perfect fit for energy storage systems. Customers benefit from 150 kW power in solar systems when paralleling two modules or 75 kW per module in energy storage systems. In addition, this module is equipped with the best-in-class CoolSiC™ trench MOSFET technology for superior gate-oxide reliability.
Key features
- CoolSiC™ trench MOSFET technology
- 3-level ANPC topology
- Full 1500 VDC capability with 1200 V switches
- Increased Si diode current rating
Additional features
- PressFIT technology
- Broadest Easy portfolio
Additional Benefits:
- Superior gate-oxide reliability
- Short and clean commutation loops
- Supports the entire cos φ range - perfect fit for energy storage systems
- Easy design-in
- High degree of freedom for the inverter design
- 150 kW power in solar applications when paralleling two modules
- 75 kW power per module in energy storage systems
Applications
- Energy storage systems
- Solar energy systems
ebv content library/npi/2021/infineon-easypack-coolsic-mosfet
Infineon Technologies EasyPACK™ Cool SiC™ MOSFET | EBV Elektronik
