600 V CoolMOS™ PFD7: Benchmark for ultrahigh-power-density designs
Application block diagram & recommended products
Pushing efficiency and power density towards a new state-of-the-art
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Robustness and reliability gains together with increased efficiency, minimized switching losses and improved thermal behavior make this product family the ultimate choice for contemporary engineering designs. The fundamental prerequisite for selecting the optimal MOSFET for the desired application is to clearly understand its key features and benefits, and also its improvements compared to legacy technologies.
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Your benefit |
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Best-in-class fast body diode with ultralow reverse recovery charge
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Improved reliability
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Rugged against hard commutation
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Reduced risk of field failure
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Low Coss hysteresis losses
Reduced turn-off and gate-driving losses*
Lower conduction charge/discharge losses*
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Outstanding efficiency
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Maximum power density limit >20 W/in³
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Ultrahigh-power-density designs
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5°C lower MOSFET temperature*
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Reduced risk of hotspot on the adapter case
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Very low FOM RDS(on) x Eoss
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Easy manufacturing reducing operating cost
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Broad package portfolio with a wide range of RDS(on) values
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Easy selection of right parts for design fine-tuning
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Dedicated evaluation boards
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Fast time to market
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*compared to previous CoolMOS™ families
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