TrenchFET® MOSFET in PowerPAK® SO-8 featuring SIR626DP
This 60 V TrenchFET® Gen IV n-channel power MOSFET in the 6.15 mm by 5.15 mm PowerPAK® SO-8 single package. Designed to increase the efficiency of power conversion topologies, the Vishay Siliconix SiR626DP offers 36 % lower on-resistance than previous-generation devices, while delivering the lowest gate charge and output charge in its class.
Applications include Synchronous rectification in AC/DC power supplies, Primary- and secondary-side switching in DC/DC topologies for power delivery in telecom, server, medical equipment. Half-bridge power stage and buck-boost converter in voltage regulation for server and telecom equipment DC/DC converter in solar micro-inverters. Motor drive control in power tools and industrial equipment. Battery switching in battery management modules and load switching for 24 V systems
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Wide Range of Packages and Products, Featuring the N-Channel 45 V (D-S) SiR608DP
Vishay is the market leader in 40 V to 250 V MOSFETs in PowerPAK® Packages, offering highly efficient solutions for power generation, power supplies, and power consumption.
Vishay´s 45 V devices offer a 12.5 % higher safety margin than identical 40 V rated solutions, which can have insufficient headroom. Moving to 60 V device sacrifices performance as RDS-Qg FOM increases. Vishay´s 45 V parts offer 65 % lower RDS-QOSS FOM than the 60 V devices.
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Leading RDS-Qg FOM Among Similar Products, Featuring the SiJ188DP
The single-channel PowerPAK® SO-8L is an AEC Q101 qualified package optimized for power supplies, adapters, motor drive control, and industrial applications. Its key features include the package's thermo-mechanical resilience, which allows the PowerPAK® SO-8L to survive the designed life cycle of the application. In addition, its flexible leads allow movement, while its package footprint is 52 % smaller and package profile is 50 % thinner than the DPAK. It offers leading RDS-Qg FOM among similar products.
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TrenchFET® Gen IV Top-Side, Double Cooling MOSFETs, Featuring the SiDR626DP
These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET® double-cooling MOSFETs offer variants with different drain-source breakdown voltages of 25 V, 30 V, 40 V, 60 V, 80 V, 100 V, 150 V, and 200 V. These n-channel MOSFETs operate at a temperature range from -55 °C to 150 °C. The devices can be utilized for product-specific applications, including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
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