New Product Introduction

Infineon Technologies CoolGaN™ transistors

Ultimate efficiency and reliability at ease-of-use

Infineon Technologies CoolGaN™ transistors product image

Infineon’s CoolGaN™ is a highly efficient GaN (gallium nitride) transistor technology for power conversion in the voltage range up to 600V. The high performance CoolGaN™ e-mode HEMTs are available in both top-coooled as well as bottom-cooled SMD packages. This enables highest efficiency and power density as well as optimal thermal behavior in the application. 

 

Key features

  • Enhancement mode transistor – normally OFF switch
  • Ultra fast switching
  • No reverse-recovery charge
  • Capable of reverse conduction

 

Additional features

  • Low gate charge, low output charge
  • Superior commutation ruggedness
  • Qualified for industrial applications according to JEDEC standards (JESD47 and JESD22)
  • Improves system efficiency
  • Improves power density
  • Enables higher operating frequency
  • System cost reduction savings
  • Reduces EMI

 

Applications

  • Industrial
  • Telecom
  • Datacenter SMPS based on the half-bridge topology

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