onsemi NTBL045N065SC1
NTBL045N065SC1 - Silicon Carbide (SiC) MOSFET, 33 mohm, 650 V, M2, TOLL
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. The TOLL package offers improved thermal performance and excellent switching performance thanks to Kelvin Source configuration and lower parasitic source inductance. TOLL offers Moisture Sensitivity Level 1 (MSL 1).
Features
- High Junction Temperature (Tj = 175°C)
- Leadless thin SMD package
- Kelvin Source Configuratio
- Ultra Low Gate Charge (Qg(tot) = 105 nC)
- Low Effective Output Capacitance (Coss = 162 pF)
- Zero reverse recovery current of body diode
- Typ. RDS(on) = 33 mΩ @ Vgs : 18V
- 650V rated
- 100% Avalanche Tested
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
- Moisture Sensitivity Level 1 guarantee
- Internal Gate Resistance: 3.1 Ω
Benefits
- Higher system reliability
- High power density
- Low gate noise and switching loss
- Low switching loss
- Zero reverse recovery current of body diode
- Higher system reliability in LLC and Phase shift full bridge circuit
- Low conduction loss
Applications
- Telecommunication
- Cloud system
- Industrial
End products
- Telecom power
- Server power
- UPS / ESS
- Solar
silica content library/npi/onsemi/ntbl045n065sc1
onsemi NTBL045N065SC1 SiC MOSFET | Avnet Silica
