STMicroelectronics 1200V silicon-carbide diodes
1200 V SiC diodes deliver superior efficiency and robustness
ST’s range of 1200 V silicon-carbide (SiC) JBS (Junction Barrier Schottky) diodes meets designers' needs for superior efficiency, low weight, small size, and improved thermal characteristics for performance-oriented applications.
Offering the best-in-class forward voltage (lowest VF) and state-of-the-art robustness, our 1200 V SiC diodes provide extra freedom to achieve high efficiency and reliability with lower current rating and therefore lower cost, while reducing operating temperature and extending application lifetime. They ensure a perfect fit in every switch mode converter and inverter - SMPS, UPS, solar, motor drives- where extreme power density and efficiency are needed.
Covering current ratings from 2 to 40 A, our 1200 V SiC diode family includes industrial-dedicated as well as automotive-qualified devices in surface-mount DPAK HV (high-voltage) and D²PAK, or through-hole TO-220AC and TO-247LL (long-lead) packages.
ST's 1200V SiC allows reaching the highest standards and smallest form factor.
Main characteristics
- High efficiency of the power converter (thanks to low forward conduction and switching losses)
- High power integration with dual diodes for reduced PCB form factor
- Significant reduction of power converter size and cost
- Low EMC impact, for simplified certification and reduced time-to-market
- Natural high robustness ensuring very high reliability
