| Image | Product |
|---|---|
|
STMicroelectronics SCT011HU75G3AG
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high |
|
STMicroelectronics DCP0606Y
The DCP0606Y is a high efficiency monolithic step-down synchronous switching regulator designed to deliver up to 6 A continuous current. The IC operates from 2.9 V to 6 V input voltage. The DCP0606Y features low-resistance integrated N-channel MOSFE |
|
STMicroelectronics LSM6DSV320X
The LSM6DSV320X is a high-end, low-noise, low-power, small IMU, featuring a 3-axis digital low-g accelerometer at 16 g, a 3-axis digital high-g accelerometer at 320 g, and a 3-axis digital gyroscope, which offers the best IMU sensor with a quad-chann |
|
onsemi ATP113
ATP113 is P-Channel Power MOSFET, -60 V, -35 A, 29.5 mΩ, Single ATPAK for General-Purpose Switching Device Application. Features ON-resistance RDS(on)1= 22.5 mΩ (typ)4 V driveInput Capacitance Ciss= 2400 pF(typ)Protection diode in Applicati |
|
|
onsemi ATP304
ATP304 is P-Channel Power MOSFET -60 V, -100 A, 6.5 mΩ, ATPAK. Features Ultra Low on resistanceHigh current capabilityBuilt-in G-S protection diode Applications Multi cells Li-ion battery protectionMotor |
|
|
onsemi FDB070AN06A0
N-Channel PowerTrench® MOSFET 60 V, 80 A, 7 mΩ, The latest shielded gate PowerTrench® MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of s |
|
|
onsemi FDA69N25
UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is |
|
|
onsemi EFC4626R
EFC4626R is N-Channel Power MOSFET, 24 V, 5 A, 46.2 mΩ, Dual EFCP. Features 2.5 V DriveProtection Diode InCommon−Drain Type2 kV ESD HBMThis Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant Applications Lithium-ion battery cha |
|
|
onsemi FDA032N08
This N-Channel MOSFET is produced using PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Features RDS(on)= 2.5 mΩ (Typ.) @ VGS= 10 V, ID= 75 AFast Switching SpeedLo |
|
|
onsemi NFVF97565L1ZT1
NFVF97565L1ZT1 is an advanced automotive smart power module providing a fully-featured, high-performance full bridge inverter output stage for Exciter Motor Application. Features 650 V − 75 A Full Bridge Inverter13 pin Automotive Smart Power Mod |
|
|
onsemi NXH600N105L7F5S1HG
The NXH600N105L7F5S1HG is power integrated module(PIM) containing an I-type NPC three level inverter with 1050 V FS7 IGBTs and 1050 V Extremefast Diodes. The module contains an NTC thermistor. Features I-type Neutral Point Clamped Three-level In |
|
|
onsemi NXH160T120L2Q2F2S1
The NXH160T120L2Q2F2SG is a power integrated module (PIM) containing a split T-type neutral point clamped three-level inverter, consisting of two 160 A/1200 V half-bridge IGBTs with inverse diodes, two neutral point 120 A/1200 V rectifiers, two 100 A |
|
|
onsemi FAM65CR51ADZ1
Power integrated MOSFET module with boost converter stage for multi-phase and semi-bridgeless power factor correction (PFC) with Diodes. Features Integrated SIP or DIP Boost Converter Stage Power Module for On−board Charger (OBC) in EV−PHEV5 kV/ |
|
|
onsemi FTCO3V85A1
The FTCO3V85A1 is an 80 V low Rds(on) automotive qualified power integrated module (PIM), featuring a 3-phase MOSFET bridge optimized for Automotive 48 V-12 V interleaved DC -DC converter system, It includes a precision shunt resistor for current sen |
|
|
onsemi NXV08H250DPT2
80 V 0.71 mΩ Automotive Dual Half Bridge Mosfet Power module for 6 phase inverter for 48 V mild hybrid vehicle, with pressfit signal pins, electrically isolated DBC substrate, temp sense and Automotive Qualified. Features 2 Phase MOSFET ModuleAt |
|
|
onsemi NXH100B120H3Q0
The NXH100B120H3Q0 is a power integrated module (PIM) containing a dual boost stage consisting of two 50 A/1200 V IGBTs, two 20 A/1200 V SiC diodes, and two 25 A/1600 V anti-parallel diodes for the IGBTs. Two additional 25 A/1600 V bypass rectifiers |
|
|
onsemi NXH300B100H4Q2F2
The NXH300B100H4Q2 is a three channel flying capacitor boost module. Each channel contains two 1000 V, 100 A IGBTs, two 1200 V, 30 A SiC diodes and two 1600 V, 30 A bypass diodes. The module contains an NTC thermistor. Features Extremely Efficie |
|
|
onsemi NXH600B100H4Q2F2S1G
The NXH600B100H4Q2F2S1G is a three channel Flying Capacitor Boost module. Each channel contains two 1000 V, 200 A IGBTs and two 1200 V, 60 A SiC diodes. The module contains an NTC thermistor. Features 3−channel Boost in Q2 PackageExtremely Effic |
|
onsemi FNA22512A
The FNA22512A is a Motion SPM® 2 module providing a fully-featured, high-performance inverter output stage for AC induction, BLDC, and PMSM motors. These modules integrate optimized gate drive of the built-in IGBTs to minimize EMI and losses, while a |
|
onsemi FNA25060
The FNA25060 is a Motion SPM® 2 module providing a fully-featured, high-performance inverter output stage for AC induction, BLDC, and PMSM motors. These modules integrate optimized gate drive of the built-in IGBTs to minimize EMI and losses, while al |
|
onsemi FND43060T2
FND43060T is a power module for motion control, Developed to Provide A Very Compact and High Performance Inverter Solution for AC Motor Drives in Low-Power Applications Such as Air Conditioners and Industrial Inverter. It Combines Low-Loss Short-Circ |
|
|
onsemi NVXK2PR80WXT2
1200V 80mΩ 31A Full Bridge Power Module with temperature sensing and the lowest thermal resistance for DC-DC and On Board Charger in xEV Features DIP Silicon Carbide Full Bridge Power Module for On−Board Charger (OBC) for xEV ApplicationsCreepag |
|
|
onsemi NVXK2TR40WXT
EliteSiC MOSFET Power Module 40 mOhm, 1200 V, in Dual H -Bridge configuration, AlN DBC substrate. Features DIP Silicon Carbide H−Bridge Power Module for On−board Charger (OBC) for xEV ApplicationsCreepage and Clearance per IEC 60664−1, IEC 60950 |
|
|
onsemi NVXK2VR80WDT2
1200V 80mΩ 20A 3 Phase Bridge Power Module with temperature sensing for PFC On Board Charger in xEV Features DIP Silicon Carbide 3−Phase Bridge Power Module for On−board Charger (OBC) for xEV ApplicationsCreepage and Clearance per IEC 60664−1, I |
|
onsemi AFGB30T65SQDN
Using the novel field stop 4th generation IGBT technology and AEC-Q101 Qualified. AFGB30T65SQDN offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications. Features AEC |
|
onsemi AFGB40T65RQDN
Using novel field stop IGBT technology, onsemi's new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is short-circuit rated and offers a high figure of merit with low conduction and switching losses. |
|
onsemi AFGH4L25T120RW
AEC Q101 qualified Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop VII Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and minimal swi |
|
onsemi FCA20N60F
SuperFET® MOSFET is the first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduc |
|
onsemi FCA47N60
SuperFET® MOSFET is the first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduc |
|
onsemi FCB070N65S3
SUPERFET III MOSFET is onsemi's brand−new high-voltage super−junction (SJ) MOSFET family that utilises chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimise condu |