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TRIA SM2S-G3E
The new TRIA SM2S-G3E SMARC 2.2 module family is equipped with the latest cost-effective and power-efficient RZ/G3E processors, manufactured by Renesas. The processor integrates up to four Arm® Cortex®-A55 cores, dedicated Arm Cortex-M33 Real-Time co |
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STMicroelectronics DCP3601
The DCP3601 is a wide-input voltage, easy-to-use synchronous buck converter capable of driving up to 1 A load current. The extended input range from 3.3 V to 36 V makes the device suitable for a wide range of industrial applications. The DCP3601 oper |
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Avnet Displays SimplePlus 7"
Avnet Displays' customers love the 7” SimplePlus. Why? It’s a great display that gets the job done, balancing cost and performance without cutting corners. So, it wasn’t long before customers asked them to make it a little… tougher for outdoor use. A |
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onsemi NCV51511
The NCV51511 is high side and low side gate-drive IC designed for high voltage, high-speed, driving MOSFETs operating up to 80 V. The NCV51511 integrates a driver IC and a bootstrap diode. The driver IC features low delay time and matched PWM input p |
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onsemi NCP51513
NCP51513 is 130 V half bridge driver with high drive current capabilites and options for DC-DC power supplies and inverters. NCP51513 offers best in class propagation delay, low quiescent current and low switching current at high frequencies of opera |
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NXP i.MX RT700
The i.MX RT700 features up to five computing cores designed to power smart AI-enabled edge devices such as wearables, consumer medical, smart home and HMI devices. Its Compute Subsystem includes a primary Arm® Cortex®-M33 running at 325 MHz and Caden |
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Nexperia MLPAK33 MOSFETs
Designers are increasingly dealing with space-constrained systems. Nexperia’s MLPAK33 MOSFETs offer footprint compatibility with the industry-known DFN3333. Delivering optimized RDS(on) in a space-saving package with the added benefit of micro-leads, |
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Torex XC9702
The XC9702 series is the world’s smallest 60 V 300 mA DC/DC Solution. XC9702 Synchronous Step-Down DC/DC Converters feature built-in Nch-Nch driver FETs on an extremely small 9.4 x 7.4 mm mounting area. The converters operate with a 60 V high-voltag |
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Torex XC6138
The XC6138 has been designed to monitor 12 and 24 V power rails, common in Industrial equipment. It can also be used to monitor the Voltage in Battery packs containing multiple cells in series. Able to operate up to 125ºC, the XC6138 has a separated |
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Nexperia 1200 V SiC MOSFETs
Nexperia introduces a range of highly efficient and robust industrial grade 1200 V silicon carbide (SiC) MOSFETs with industry leading temperature stability in innovative surface-mount (SMD) top-side cooled packaging technology called X.PAK. This pac |
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Nordic Semiconductor nRF54L
Built on the experience from the successful nRF52 Series—shipped in the billions and trusted by thousands of developers—the nRF54L Series is set to be a worthy successor. The nRF54L Series enables the creation of innovative next-generation IoT produc |
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Torex XCL247/48
The XCL247/48 is a synchronous step-down Micro DC/DC converter with integrated coil in an ultra-small 3.0 x 3.0 x 1.7 mm DFN3030-10B package. A stable and efficient power supply circuit can be configured by simply adding only two ceramic capacitors e |
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onsemi UJ4N075005K4S
The UJ4N075005K4S is a 750 V, 4.8mohm high-performance Gen 4 normally-on SiC JFET transistor. This device exhibits ultra-low on resistance (RDS(on)) in a TO-247-4L package, making it an ideal fit to address the challenging thermal constraints of soli |
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onsemi UJ4N075004L8S
The UJ4N075004L8S is a 750 V, 4.3 mohm high-performance Gen 4 normally-on SiC JFET transistor. This device exhibits ultra-low on resistance (RDS(on)) in a compact TOLL package, making it an ideal fit to address the challenging thermal and space const |
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onsemi UF4SC120023B7S
EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, in |
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onsemi UF3SC120040B7S
EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, in |
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onsemi UG4SC075006K4S
The UG4SC075006K4S "Combo-JFET" integrates both a 750V SiC JFET and a Low Voltage Si MOSFET into a single TO-247-4L package. This innovative approach allows users to create circuitry that would enable a normally-off switch while leveraging the benefi |
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onsemi UG4SC075005L8S
The UG4SC075005L8S "Combo-JFET" integrates both a 750V SiC JFET and a Low Voltage Si MOSFET into a single TOLL package. This innovative approach allows users to create circuitry that would enable a normally-off switch while leveraging the benefits of |
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NXP i.MX 94
The i.MX 94 family is an i.MX MPU with an integrated time-sensitive networking (TSN) switch, enabling configurable, secure communications with rich protocol support in industrial and automotive environments. This is also NXP’s first chip supporting f |
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Renesas RA2L2
The RA2L2 group is the RA Family’s entry-level single-chip microcontroller based on the 48MHz Arm® Cortex®-M23 core and up to 128KB code flash and 16KB SRAM memory. The optimized processing and Renesas' low-power process technology make it the indust |
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Avnet Displays P1010WXF1MA01
The P1010WXF1MA01 is the latest release of the 10.1" size of Tianma´s professional series. It is designed for rugged and outdoor applications with 1000 nits brightness, 88° viewing angle in all directions and extended operating temperature of -30°C |
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NXP Universal Sensing Modules
NXP's universal sensing module is a universal, software-configurable analog input solution designed for high-precision sensing and edge intelligence. It supports versatile sensor inputs (voltage, current, temperature, resistance, pressure and weight) |
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STMicroelectronics STM32MP23 MPU
The STM32MP23 is a powerful and versatile microprocessor designed to enhance your embedded applications. With its advanced features and robust performance, it offers seamless integration and exceptional efficiency for a wide range of projects. Experi |
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onsemi SNXH800H120L7QDSG
The SNXH800H120L7QDSG is a 1200 V 800 A rated half bridge IGBT power module. The integrated Field Stop Trench 7 IGBTs and Gen. 7 diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior r |
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STMicroelectronics STDRIVEG611
The STDRIVEG611 is a high-voltage half-bridge gate driver for N‑channel Enhancement Mode GaN. The high-side driver section is designed to stand a voltage rail up to 600 V and can be easily supplied by the integrated bootstrap diode. High current ca |
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STMicroelectronics STDRIVEG610
The STDRIVEG610 is a high-voltage half-bridge gate driver for N‑channel Enhancement Mode GaN. The high-side driver section is designed to stand a voltage rail up to 600 V and can be easily supplied by the integrated bootstrap diode. High current ca |
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STMicroelectronics TS3121
The TS3121 and the TS3121A single comparators permit high-speed response time at low power consumption over a supply voltage specified from 1.7 to 5.5 V. These devices operate over a wide temperature range from -40 °C to +125 °C making them ideal for |
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STMicroelectronics LDH40
LDH40 is a high accuracy voltage regulator designed to be directly connected to a car battery in automotive applications, or a generic battery connected in industrial applications. Extended input voltage up to 40 V makes the device capable to support |
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STMicroelectronics LDL40PUR
LDL40 is a high accuracy voltage regulator designed to be directly connected to a car battery in automotive applications or a generic battery used in industrial applications. Extended input voltage up to 40 V makes the device able to support a load d |
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STMicroelectronics SCT019HU120G3AG
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high |