Diodes Incorporated SiC Diodes and MOSFETs

Diodes Incorporated’s (Diodes) broad portfolio of DFN2020 packaged bipolar junction transistors and MOSFETs provides design engineers with small but powerful solutions that can increase the power density and efficiency of designs where space saving is paramount. They deliver this without compromising electrical or thermal performance when compared to larger small-outline transistor (SOT) packaged solutions. At just 2mm × 2mm (4mm²), the DFN2020 package is redefining what’s possible in compact power design. Despite its tiny PCB footprint, this package delivers exceptional thermal and electrical performance, thanks to its rear-mounted heatsink, achieving junction-to-case thermal resistance (RθJC) as low as 13°C/W and enabling DFN2020 packaged devices to deliver the same performance as much larger small-outline packages such as SOT89 and SOT223. The performance of DFN2020 is best illustrated by a real world example: the BCP5316Q is a 80V 1A PNP bipolar junction transistor packaged in SOT223 that is widely used in linear applications.