Diodes Incorporated Analog & Power Solutions
DFN Packaged High-Performance Bipolar Junction Transistors and MOSFETs Pack a Powerful Punch
Diodes Incorporated’s (Diodes) broad portfolio of DFN2020 packaged bipolar junction transistors and MOSFETs provides design engineers with small but powerful solutions that can increase the power density and efficiency of designs where space saving is paramount. They deliver this without compromising electrical or thermal performance when compared to larger small-outline transistor (SOT) packaged solutions. At just 2mm × 2mm (4mm²), the DFN2020 package is redefining what’s possible in compact power design. Despite its tiny PCB footprint, this package delivers exceptional thermal and electrical performance, thanks to its rear-mounted heatsink, achieving junction-to-case thermal resistance (RθJC) as low as 13°C/W and enabling DFN2020 packaged devices to deliver the same performance as much larger small-outline packages such as SOT89 and SOT223. The BCP5316Q is an 80V, 1A PNP BJT in an SOT223 package and widely used in linear applications. The thermal and electrical performance of this device can now be matched by the DFN2020 packaged BC53-16PAWQ whilst occupying just 9 percent PCB area.
Features
- 4mm2 footprint
- Low Rthjc
- 0.6mm off board height
- Sidewall plating
Benefits
- PCB area reduction
- Higher power density
- Lower profile designs
- Enables automated optical inspection
Product portfolio
| Part number | Product description | Datasheet |
|---|---|---|
| DMT34M8LFDE | 30V N-Channel 4mOhm Enhancement Mode MOSFET | Download datasheet |
| DMTH4008LFDFWQ | Automotive Compliant 40V 10mOhm N-Channel Enhancement Mode MOSFET | Download datasheet |
| DMP1009UFDF | 12V 11mOhm P-Channel Enhancement Mode MOSFET | Download datasheet |
| DXTN10060DFJBWQ | 60V, 4A, NPN Bipolar Junction Transistor | Download datasheet |
| BC53-16PAWQ | 80V, 1A, PNP Bipolar Junction Transistor | Download datasheet |
| BC56-16PAWQ | 80V, 1A, NPN Bipolar Junction Transistor | Download datasheet |
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