Custom Meta Tags

AVS NPI Hero (HB)

New Product Introductions

AVS NPI H1 (MT)

Avnet Silica new product introductions

Static HTML

NPI SEO Table

Reset
Image Product
Renesas RA4M3 MCU Group
With the RA4M3 group, Renesas expands their Renesas RA4 series. It is based on the latest Arm Cortex-M33 Core with TrustZone with increased 1 MB on-chip Flash and 128KB on-chip RAM. The integrated Standby RAM along with the low power consumption of t
NXP i.MX RT1024
Featuring ARM Cortex-M7 core with up to 500 MHz frequency, the i.MX RT1024 expands the popular i.MX RT Series with an LQFP package option. The i.MX RT1024 expands the i.MX RT series by providing a small, low-cost crossover package in LQFP packaging,
STMicroelectronics ULN2003
The ULN2001, ULN2002, ULN2003 and ULN2004 are high-voltage, high-current Darlington arrays each containing seven open collector Darlington pairs with common emitters. Each channel is rated at 500 mA and can withstand peak currents of 600 mA. Suppress
Renesas RA2L1 MCU Group
The RA2L1 MCU Group is part of the RA2 MCU Series, and is currently the smallest member of the RA Family. It is a combination of microcontroller with standard communication and timing peripherals, general-purpose analog and new innovative capacitive
Renesas ISL81801/ISL81802
The ISL81801 will be the lead part and is an industry-first 80V on-the-fly bidirectional 4-switch synchronous buck-boost controller with constant voltage and constant current regulation. It joins the ISL81601 (60V) and ISL81401 (40V) in the high volt
onsemi Dual Camera Mezzanine Kit
This 96Boards mezzanine card features two Polight IAS-compatible imaging modules based on imaging sensors from onsemi. These sensors interface to an AP1302 imaging coprocessor. By using the 96Boards standard, this card could be easily prototyped with
Torex XD6130/31
The XD6130/31 are a family of high precision voltage detectors with built in watchdog function. The watchdog timeout time and release delay time can be set as desired using a single external capacitor. These voltage detectors are used for microproce
Renesas RA6T1 MCU Group
The RA6T1 offers leading performance with a 120-MHz Arm® Cortex®-M4 core and is suitable for motor control applications. It is equipped with various peripherals including 512-KB code flash memory and 64-KB SRAM. To simplify the application design for
Lifud LF-GIFxxxYA
The LF-GIFxxxYA LED drivers from Lifud use a patented technology which recently won the Best Product 2020 award at LpS. Its main characteristic is its totally unnoticeable / hardly measurable level of flicker (< 0.5%). Not only this is considered as
Elmos E522.88
The E522.88 is a multi-channel PWM driver for light application. It provides 16 current sinks with integrated 10bit PWM generator for each channel. Each of the drivers can digitally be configured to drive up to 100mA with a selectable slew rate. The
Elmos E522.48
The E522.48 is a multi-channel PWM driver for e.g. light application. It provides 16 current sinks with integrated 10bit PWM generator for each channel. Each of the drivers can digitally be configured to drive up to 100mA with a selectable slew rate.
Microchip PolarFire SoC
The PolarFire® SOC is the first system on chip (SoC) field-programmable gate array (FPGA) with a deterministic, coherent RISC-V® CPU cluster and a deterministic L2 memory subsystem enabling Linux and real-time applications. Built on the award-winnin
Renesas RA6M4 MCU Group
The RA6M4 MCU Group is an expansion of the Renesas RA Family. It offers leading performance 200 MHz Arm® Cortex®-M33 core with TrustZone, 1 MB code flash memory, 256 KB SRAM, Background Operation (BGO) and SWAP function, Capacitive Touch Sensing Unit
STMicroelectronics STM32H735IG
STM32H735xG devices are based on the high-performance Arm® Cortex®-M7 32-bit RISC core operating at up to 550 MHz. The Cortex® -M7 core features a floating point unit (FPU) which supports Arm® double-precision (IEEE 754 compliant) and single-precisio
STMicroelectronics STPSC10065DLF
This 10 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky c
STMicroelectronics IIS2ICLX
The IIS2ICLX is a high-accuracy (ultra-low noise, high stability and repeatability) and low-power two-axis linear accelerometer with digital output. The IIS2ICLX has a selectable full scale of ±0.5/±1/±2/±3 g and is capable of providing the measured
Sandisk PC SN530 NVMe SSD
The Sandisk PC SN530 NVMe™ SSD is designed for a multitude of applications that require both high performance and low power. The device is not only capable of more than three times the read speed over SATA SSDs, but further optimizes the low power co
Micron DDR5 SDRAM
DDR5, the most technologically advanced DRAM to date, will enable the next generation of server workloads by delivering more than an 85% increase in memory performance. DDR5 doubles memory density while improving reliability at a time when data cente
STMicroelectronics B-L4S5I-IOT01A
With the B-L4S5I-IOT01A Discovery kit for IoT node, users develop applications with direct connection to cloud servers. The Discovery kit enables a wide diversity of applications by exploiting low-power communication, multiway sensing and Arm® Cortex
STMicroelectronics STEF12H60 60A Electronic Fuse
When connected in series to the main power rail, it is able to detect and react to overcurrent conditions. When an overload condition occurs, the device limits the output current to a safe value defined by the user. A precise current monitor signal
STMicroelectronics IPS160HF and IPS161HF
The 60 V operating range and Ron = 60 mΩ, combined with the extended diagnostic (Open Load, Over Load, Overtemperature) and the < 60 us propagation delay time at startup (enabling Class 3 for interface types C and D), make the ICs suitable to address
STMicroelectronics TSB7191 Precision operational amplifier
These amplifiers have the advantage of offering a large span of supply voltage and an excellent input offset voltage of 300 µV maximum at 25 °C. The combination of wide bandwidth, slew rate, low noise, rail-to-rail capability and precision makes the
STMicroelectronics X-CUBE-AZURE
The X-CUBE-AZURE Expansion Package consists of a set of libraries and application examples for STM32L4 Series, STM32F4 Series, and STM32F7 Series microcontrollers acting as end devices. X-CUBE-AZURE runs on four platforms. The B-L475E-IOT01A and 32F
onsemi NXHxxC120L2C2(E)
onsemi announced the NXH25C120L2C2, NXH35C120L2C2/2C2E, and NXH50C120L2C2E, which are 25, 35, and 50 Ampere versions of Transfer-Molded Power Integrated Modules (TM-PIM) for 1200 Volt applications. They are available in Converter-Inverter-Brake (CIB)
Zynq UltraScale+ RFSoC ZCU208 ES1 Evaluation Kit
The Xilinx Zynq UltraScale+ RFSoC ZCU208 ES1 Evaluation Kit features a Zynq UltraScale+ RFSoC ZU48DR, which integrates eight 14-bit 5GSPS ADCs, eight 14-bit 10GSPS DACs, and eight soft-decision forward error correction (SD-FEC) cores designed to jump
Renesas RE01 1500KB
The RE01 1500KB product is based on the SOTB™ process technology which realizes ultra-low current consumption in both active and standby mode and high-speed operation (64MHz) at low voltage (1.62V), which is impossible to achieve with conventional bu
Renesas RE01 256KB
The RE01 256KB based on SOTB™ process technology realizes ultra-low current consumption in both active and standby mode and high speed operation (64MHz) at low voltage (1.62V) , which is impossible to achieve with conventional bulk silicon process. T
Renesas IPS2200 Inductive Sensor
High-accuracy motor commutation sensing, magnet free, total stray field immune for efficient and lightweight motor integration The new magnet-free IPS2200 inductive position sensor is featuring high accuracy and speed, total stray field immunity, an
STMicroelectronics STPS5H100UFN
This high voltage Schottky barrier rectifier has been optimized for use in high frequency miniature DC/DC converters, reverse battery protection, battery chargers and adaptors. Packaged in SMB Flat Notch, the STPS5H100UFN provides a high level of pe
STMicroelectronics STP50N65DM6
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) pe
Results Per Page: