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Lumileds LUXEON HL2X
LUXEON HL2X is a high-power domed emitter designed specifically for outdoor and industrial applications like streetlights and high bay luminaires. The high power package is designed to deliver superior output, efficacy, color stability and longevity |
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Lumileds LUXEON 5050
LUXEON 5050 LEDs are high-power LED packages that provide high-power white luminance from super robust packages to enable cost-effective, single optic and directional fixture designs. LUXEON 5050 is available in 6V, 24V, and 30V options, and LUXEON 5 |
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Diodes Incorporated ZXMS82 series IntelliFET®
The Diodes ZXMS82xxxS14PQ series of IntelliFETs consists of automotive-compliant, dual-channel, intelligent, high-side power switches designed to handle high inrush current loads while offering robust protection for both the device itself and the con |
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Teledyne e2v DDR4
The 4/8GB Radiation Tolerant DDR4 Memory Multi-Chip Package (MCP) is a Ultra High Density Memory Solution, targeting Space Embedded Systems & Applications. The advanced DDR4 memory optimized for space applications delivers superior performance while |
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Renesas DA16600MOD
The DA16600 modules provide a convenient way to add both low power Wi-Fi and low power Bluetooth® Low Energy (LE) functionality to your device. The low power Wi-Fi DA16200 system-on-chip (SoC) and the low power Bluetooth LE DA14531 SoC are integrated |
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Renesas PTX130R
The PTX130R NFC reader IC featuring native support for the Android™ operating environment provides an ideal way to add NFC communications capability to embedded computing systems built around a touchscreen display. The PTX130R features a very high RF |
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Renesas PTX105R
The PTX105R is the industry’s best-performing NFC controller for Internet of Things applications. Due to its unique sine wave architecture, PTX105R is an optimized solution for IoT applications with small form factors. Superior sensitivity, accurate |
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Renesas PTX100R
The PTX100R NFC reader serves IoT and Point-of-Sale (PoS) applications, implementing a unique sine wave hardware transceiver architecture and offering a winning combination of superior transmit power and sensitivity, accurate wave shaping, and a redu |
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Renesas DA16200MOD
DA16200 modules are the perfect complement to the DA16200 ultra-low power Wi-Fi SoC. They deliver the same long battery life and low power consumption but in a convenient form factor. The modules are complete with all required components and are regu |
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Renesas DA16200
The DA16200 system-on-chip (SoC) is the world's first Wi-Fi SoC to deliver year-plus battery life for always-connected Wi-Fi IoT devices. DA16200 is a low power Wi-Fi networking SoC that delivers a dramatic breakthrough in battery life even for devic |
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Renesas DA14695
The SmartBond™ DA1469x family of Bluetooth® Low Energy solutions is a feature-rich range of multi-core microcontroller units for wireless connectivity. The product family builds off the successes of Renesas' SmartBond line, boasting three additional |
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Renesas DA14535
The DA14535 is an ultra-low power SoC integrating a 2.4GHz transceiver and an Arm® Cortex®-M0+ microcontroller with a RAM of 64kB and a One-Time Programmable (OTP) memory of 12kB. It can be used as a standalone application processor or as a data pump |
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Avnet Silica & Tria QCS6490 Vision-AI Development Kit
The QCS6490 Vision-AI Development Kit features an energy-efficient, multi-camera, SMARC 2.1.1 compute module, based on the Qualcomm QCS6490 SOC device. High performance cores on the QCS6490 SOC include an 8-core Kryo™ 670 CPU, Adreno 643 GPU, Hexago |
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STMicroelectronics STM32H7 Series
The STM32H7 series offers developers more freedom to accommodate future end-user demands and evolving market requirements for rich, connected, powerful, and secure applications. The series is based on the 32-bit Arm Cortex®-M7 core, running at up to |
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STMicroelectronics TSV7721
The TSV7721, TSV7722 and TSV7723 are single and dual 22 MHz-bandwidth unity-gain-stable amplifiers. The input offset voltage of 200 µV max. (50 µV typ.) at room temperature, optimized for common-mode close to ground makes the TSV772x ideal for low-si |
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STMicroelectronics TSB582
The TSB582 is a unity gain stable, dual operational amplifier with high voltage and high current capability, featuring internal protections against overtemperature and current overload conditions. In addition, the TSB582 has enhanced ESD and RF noise |
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STMicroelectronics TSZ181
The TSZ181, TSZ182 are single and dual operational amplifiers featuring very low offset voltages with virtually zero drift versus temperature changes. The TSZ181, TSZ182 offer rail-to-rail input and output, excellent speed/power consumption ratio, a |
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STMicroelectronics TSZ121
The TSZ12x series of high precision operational amplifiers offer very low input offset voltages with virtually zero drift. TSZ121 is the single version, TSZ122 the dual version, and TSZ124 the quad version, with pinouts compatible with industry stan |
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STMicroelectronics TSB7191A
The TSB7191, TSB7191A, TSB7192 and the TSB7192A 22 MHz bandwidth amplifier feature rail-to-rail input and output, which is guaranteed to operate from +2.7 V to +36 V single supply as well as from ±1.35 V to ±18 V dual supplies. These amplifiers have |
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STMicroelectronics TSB622
The TSB621, TSB622, TSB624 are general purpose operational amplifiers featuring an extended supply voltage operating range and rail-to-rail output. They also offer an excellent speed/power consumption ratio with 1.7 MHz gain bandwidth product while c |
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STMicroelectronics TSB512
The TSB511, TSB512, TSB514 is a series of 6 MHz bandwidth amplifiers featuring rail-to-rail input and output, which are guaranteed to operate from 2.7 to 36 V single supply as well as from ± 1.35 V to ± 18 V dual supplies. These amplifiers have the |
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STMicroelectronics TSX562
The TSX56x, TSX56xA series of operational amplifiers benefit from STMicroelectronics® 16 V CMOS technology to offer state-of-the-art accuracy and performance in the smallest industrial packages. The TSX56x, TSX56xA have pinouts compatible with indust |
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STMicroelectronics TS883
The open-drain series of nanopower comparator integrates a single version TS880 and a dual version TS883. They feature an ultra low supply current of 250 nA typical per operator with rail-to-rail input capability and open-drain output. The performanc |
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STMicroelectronics TSU111
The TSU111, TSU112 and the TSU114 operational amplifiers (op-amp) offer an ultra low-power consumption per channel of 900 nA typical and 1.2 µA maximum when supplied by 3.3 V. Combined with a supply voltage range of 1.5 V to 5.5 V, these features all |
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STMicroelectronics TSU102
The TSU101, TSU102, and TSU104 operational amplifiers offer an ultra low-power consumption of 580 nA typical and 750 nA maximum per channel when supplied by 1.8 V. Combined with a supply voltage range of 1.5 V to 5.5 V, these features allow the TSU10 |
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Nexperia BLDC Motor Driver Kit
Nexperia's NEVB-MCTRL-100 BLDC motor driver kit provides a full motor drive solution for 12 V - 48 V, 1000 W, 3-phase BLDC motors. It contains PCBs designed for the Nexperia LFPAK56 MOSFET family and the modular design allows for different motor cont |
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STMicroelectronics SCT027H65G3AG
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high |
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STMicroelectronics SCT027W65G3-4AG
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high |
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STMicroelectronics SCT040TO65G3
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high |
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STMicroelectronics SCT040W65G3-4
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high |