Innovative Power Semicondactors for All Electric Society
Innovative SiC JFET technology is paving the road for solid state circuit brakers deplyment, replacing decades old technology of mechanical circuit brakers. New SiC MOSFET and IGBT technologies supported by innovative packaging are essential elements of future battery energy storage systems.
Video: High Voltage Solid State Power Distribution
Learn about Infineon JFET SiC technology and how it enables reliable solid state power distribution.
- CoolSiC™ JFET
- Energy Storage Systems - BESS
The heart of next-generation Solid-State Power Distribution
CoolSiC™ JFET devices deliver minimized conduction losses, solid turn-off capability, and high robustness, making them ideal for advanced solid-state protection and distribution, including robust short-circuit capability, thermal stability in linear mode, and precise overvoltage control.
Product Highlights
Infineon Technologies
CoolMOS™ S7T 600V QDPAK
The CoolMOS™ S7T with embedded temperature sensor increases junction temperature sensing accuracy and robustness while enabling easy implementation. The device is optimized for low-frequency and high-current switching applications.
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Overview of smart power distribution and Infineon SiC JFET technology
Elevate your BESS designs and differentiate through performance and reliability
Battery-based ESS technology can respond to power dropouts in under a second, making use of clean energy sourced from collocated solar or wind plants. In such before-the-meter cases, ESS functions as bulk storage coupled with either renewables generation or transmission and distribution systems. In residential and commercial situations, ESS plays a role as behind-the-meter.
Product Highlights
Infineon Technologies
2000 V SiC MOSFET Family IMYH200RxxxM1H
The CoolSiC™ 2000 V SiC MOSFET family in TO‑247PLUS‑4‑HCC, spanning 12–100 mΩ with matching diodes from 10–80 A, delivers higher power density while maintaining reliability under demanding high‑voltage and high‑frequency conditions.
Infineon Technologies
1200V CoolSiC Easy Power Modules
The EasyPACK™ and EasyDUAL™ 1B and 2B in various topologies with CoolSiC™ MOSFET enhanced generation 1 are suitable for 1200 V applications and come with PressFIT contact technology and NTC.
Infineon Technologies
New CoolSiC™ Generation 2 in 1200V in a D²PAK-7
The CoolSiC™ G2 1200 V family in a D²PAK-7L (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions.
