Yageo KEMET PMT6709NL gate drive transformers
Yageo KEMET announces PMT6709NL gate drive transformers
The PMT6709NL is an isolation power transformer designed for high-frequency SiC/GaN MOSFET drive circuits, providing reinforced insulation and minimizing interwinding capacitance for enhanced performance.
enhances the efficiency of the drive circuit. However a tightly coupled transformer design results in relatively high interwinding capacitance, limiting higher
Features
- Up to 3W LLC, SiC, and GaN drive transformer
- Reinforced insulation with 12mm creepage and 7.4mm clearance
- Hi‑Pot isolation voltage up to 4200Vrms
- Rated voltage up to 1250Vpk
- Compact footprint: 17.2mm × 11mm × 8.5mm (max)
Applications
- Main Applications
- Motor drive circuits and inverter systems
- 3‑phase inverters and industrial power conversion systems
- SiC and GaN gate driving circuits (LLC and high‑frequency topologies)
- Power Electronics & Energy Systems
- Solar inverters and renewable energy systems
- Energy storage systems (ESS) and battery management systems (BMS)
- On‑board chargers (OBC) and DC‑DC converters for EV platforms
- Industrial & Infrastructure
- Industrial automation and power supplies
- High‑voltage isolation for gate driver circuits
- Switching power supplies (LLC, flyback, push‑pull, half‑bridge, full‑bridge)
- Additional Use Cases
- Medical power systems (isolated supplies)
- Automotive power electronics (traction inverters, motor control units)
