YAGEO Group PMT6709NL gate drive transformers
YAGEO Group announces PMT6709NL gate drive transformers
YAGEO's PMT6709NL isolation transformer is engineered for high-performance SiC and GaN MOSFET gate drive applications. Designed with reinforced insulation and optimized low interwinding capacitance, it delivers reliable galvanic isolation while minimizing common-mode noise and EMI coupling. The result is enhanced system reliability, higher power density, and optimized performance for demanding industrial, automotive, and energy applications.
Features
- Up to 3W LLC, SiC, and GaN drive transformer
- Reinforced insulation with 12mm creepage and 7.4mm clearance
- Hi‑Pot isolation voltage up to 4200Vrms
- Rated voltage up to 1250Vpk
- Compact footprint: 17.2mm × 11mm × 8.5mm (max)
Applications
- Main Applications
- Motor drive circuits and inverter systems
- 3‑phase inverters and industrial power conversion systems
- SiC and GaN gate driving circuits (LLC and high‑frequency topologies)
- Power Electronics & Energy Systems
- Solar inverters and renewable energy systems
- Energy storage systems (ESS) and battery management systems (BMS)
- On‑board chargers (OBC) and DC‑DC converters for EV platforms
- Industrial & Infrastructure
- Industrial automation and power supplies
- High‑voltage isolation for gate driver circuits
- Switching power supplies (LLC, flyback, push‑pull, half‑bridge, full‑bridge)
- Additional Use Cases
- Medical power systems (isolated supplies)
- Automotive power electronics (traction inverters, motor control units)
