Passives For SiC & GaN

AVA Virtual Power Fair Intro (LC)

Display portlet menu

Passive components for Silicon Carbide and Gallium Nitride applications

Wide bandgap (WBG) semiconductors using SiC and GaN materials offer the promise of greater power efficiency and smaller sized power circuits. These innovative new technologies operate at higher voltages, frequencies and temperatures, presenting new challenges for capacitors and magnetic components. 

Passive components manufacturers are responding with product specifications to fully exploit these wide band-gap semiconductor innovations, with higher current ratings, operating temperatures and dv/dt.

Our technical specialists can support your design requirements and offer advice on:

  • The key parameters, considerations and specifications for selecting passive components for wide band gap (WBG) applications
  • Selecting capacitor and magnetic components in WBG applications for optimal efficiency, performance, size and cost 
  • Innovations from world-leading passive component manufacturers that are enabling next-generation power electronics designs 
     

Get in touch in your local language, or explore our product range below.

 

KEMET

KC-LINK surface mount capacitors

KEMET's KC-LINK surface mount capacitors are designed to meet the growing demand for fast switching semiconductors that operate at higher voltages, temperatures, and frequencies.

TDK

CeraLink™

TDK Corporation presents a new generation of the EPCOS CeraLink™, a highly compact solution for the snubber and DC links of fast-switching converters based on SiC and GaN semiconductors.

Vishay

IHLP-1616BZ-0H series IHLP® inductor

Vishay's IHLP-1616BZ-0H series is the first extended-frequency inductor in the low profile, high current IHLP family.

Vishay Intertechnology introduces the first extended-frequency inductor in the low profile, high current IHLP family.

Vishay

IHSR-1616AB-01 series

Vishay Intertechnology expands its IHSR series of high saturation commercial inductors with a new device in the compact 4 mm by 4 mm 1616 case size.

Vishay

IHDF-1300AE-10 series edge-wound through-hole inductors

Vishay Intertechnology IHDF edge-wound, through-hole inductor with rated current up to 72A and saturation current up to 230 A for industrial and military applications.

Technology solutions

Passive components for SiC applications

KEMET has developed a range of capacitors and magnetic components specifically to meet the requirements of SiC topologies, offering smaller footprints for more board savings, lower application costs, best-in-class performance and long lifetimes.

Selecting passives for SiC topologies in electric vehicle chargers

Learn how SiC devices can improve efficiency and reduce board size electric vehicle charging designs, and the importance of careful passive component consideration for SiC topologies in EV systems.

How to make the most of silicon carbide efficiency gains

Most of the board space in SiC designs is made up of passive components that enable the efficiency gains this semiconductor technology brings. Learn about the latest developments and considerations for your design.

Webinar: Optimising Wide Bandgap applications with the latest passive component innovations

On-demand

Learn how to tap into the potential size and efficiency benefits of your Wide Bangap applications with the latest passive components in this webinar with KEMET.

Engineering Services

Ask an expert

Have a question? Our regional technical specialists are on hand to help

Semiconductor solutions

Infineon CoolSiC™ MOSFETs and Diodes from EBV

Now is the time to discover the benefits of silicon carbide (SiC). Drive down system costs and improve reliability and performance with Infineon's CoolSiC™ solutions.

Semiconductor solutions

Wide Bandgap solutions from EBV

Silicon carbide (SiC) and gallium nitride (GaN) offer much more efficient power conversion properties over traditional solutions. Discover EBV's range of solutions for Wide Bandgap applications.