Fast, Scalable EV Charging & Control
Powering Next-Gen Mobility with Scalable, Smart, and Secure EV Solutions
Renesas delivers fast, secure, and scalable EV solutions. From motor control to charging, our all-in-one designs integrate control, connectivity, and safety—reducing R&D effort and speeding time-to-market.
- RH850/F1KM-S2
- DA14533
- RBA300N10EANS-3UA02
- TP65H030G4PWS
With the built-in CAN FD interface, RH850/F1K group of automotive-grade MCUs provides the necessary performance to manage battery management systems and autonomous features.
Product highlights
Renesas
RH850/F1KM-S2
High-end Automotive Microcontrollers Ideal for Body Applications. RH850/F1KM-S2 is the newest device in RH850/F1K series with performance and feature upgrades from RH850/F1K and F1KM-S1.
The DA14533 is an ultra-low power, AEC-Q100 Grade 2 qualified System-on-Chip (SoC) that integrates a 2.4GHz transceiver and an Arm® Cortex®-M0+ MCU with 64kB of RAM and 12kB of one-time programmable (OTP) memory. This SoC can function as a standalone application processor or as a data pump in hosted systems. Ultra-low power can be achieved using the integrated low IQ buck-boost DC/DC converter, which remains active during sleep in Buck mode.
The radio transceiver, the baseband processor, and the qualified Bluetooth® Low Energy (LE) stack are qualified against Bluetooth Core 5.3.
Product highlights
Renesas
DA14533
SmartBond TINY Automotive Bluetooth Low Energy SoC. DA14533 is an ultra-low power SoC integrating a 2.4 GHz transceiver and an Arm® Cortex-M0+ microcontroller.
Renesas TOLL technology features ultra-compact, leadless designs that enhance thermal performance and reliability. The Wettable Flank solution supports reliability and ease of assembly. Renesas' split gate technology is suitable for applications requiring low RDS(on) and switching capability for high-power and high-frequency applications.
Product highlights
Renesas
RBA300N10EANS-3UA02
REXFET-1 N-Channel Power MOSFET 100V-340A-1.5mΩ designed for high current switching applications. This product adopts the latest Split Gate Technology.
The TP65H030G4PWS, 650V, 30mΩ Gallium Nitride (GaN) FET in a TO-247 package is a normally-off device using Renesas' Gen IV plus SuperGaN® platform. It combines a high-voltage GaN High Electron Mobility Transistor (HEMT) with an optimized low voltage silicon MOSFET to offer superior performance, standard drive, ease of adoption, and enhanced reliability.
Product highlights
Renesas
TP65H030G4PWS
The TP65H030G4PWS, 650V, 30mΩ Gallium Nitride (GaN) FET in a TO-247 package is a normally-off device using Renesas' Gen IV plus SuperGaN® platform.
Resources
Renesas Winning Combinations links
Shaping the Electric Future Together
Invest in a sustainable, efficient and connected world – with EBV. Our semiconductor solutions are key to
successfully realising the All Electric Society – from mobility to energy and industry.
Get in touch with us and help shape the future of electrification.