Fast, Scalable EV Charging & Control
Powering Next-Gen Mobility with Scalable, Smart, and Secure EV Solutions
Renesas delivers fast, secure, and scalable EV solutions. From motor control to charging, our all-in-one designs integrate control, connectivity, and safety—reducing R&D effort and speeding time-to-market.
- RH850/F1KM-S2
- DA14533
- RBA300N10EANS-3UA02
- TP65H030G4PWS
The RH850/F1KM-S2 is one group of single-chip microcontrollers in the RH850/F1x series which is designed for automotive electrical body applications.
While it achieves low power consumption, the internal flash memory is 2MB and the package covers from 100 to 176 pins. Also, a CAN FD interface has been added and the CPU operating frequency operates up to 240MHz.
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RH850/F1KM-S2
High-end Automotive Microcontrollers Ideal for Body Applications. RH850/F1KM-S2 is the newest device in RH850/F1K series with performance and feature upgrades from RH850/F1K and F1KM-S1.
The DA14533 is an ultra-low-power, AEC-Q100 Grade 2 qualified Bluetooth® Low Energy System-on-Chip (SoC) designed for automotive and industrial applications. Featuring an integrated 2.4 GHz transceiver and an Arm® Cortex®-M0+ MCU with 64 kB RAM and 12 kB OTP memory, it delivers exceptional efficiency and flexibility. With its low IQ buck-boost DC/DC converter active during sleep and full Bluetooth® 5.3 compliance, the DA14533 can operate as a standalone application processor or as a data pump in hosted systems—making it ideal for next-generation connected solutions.
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DA14533
SmartBond TINY Automotive Bluetooth Low Energy SoC. DA14533 is an ultra-low power SoC integrating a 2.4 GHz transceiver and an Arm® Cortex-M0+ microcontroller.
Renesas TOLL technology features ultra-compact, leadless designs that enhance thermal performance and reliability. The Wettable Flank solution supports reliability and ease of assembly. Renesas' split gate technology is suitable for applications requiring low RDS(on) and switching capability for high-power and high-frequency applications.
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Renesas
RBA300N10EANS-3UA02
REXFET-1 N-Channel Power MOSFET 100V-340A-1.5mΩ designed for high current switching applications. This product adopts the latest Split Gate Technology.
The TP65H030G4PWS is a 650V, 30mΩ Gallium Nitride (GaN) FET built on Renesas’ Gen IV plus SuperGaN® platform, delivering superior performance and reliability. By combining a high-voltage GaN HEMT with a low-voltage silicon MOSFET, it offers standard drive capability and ease of adoption. Advanced epi and patented design technologies reduce gate charge, output capacitance, crossover loss, and reverse recovery charge, enabling higher efficiency compared to traditional silicon solutions.
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TP65H030G4PWS
The TP65H030G4PWS, 650V, 30mΩ Gallium Nitride (GaN) FET in a TO-247 package is a normally-off device using Renesas' Gen IV plus SuperGaN® platform.
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