The RA2A2 MCU combines a 48 MHz Arm^® Cortex^®‑M23 core with segment LCD support and high-precision analog sensing for low-power, cost-efficient designs. Featuring dual-bank flash for easy firmware updates and integrated security, it delivers reliability and optimized performance for diverse applications.
 

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Renesas

RA2A2

48MHz Arm Cortex-M23 Ultra-Low Power General-Purpose Microcontroller with Rich Peripherals.

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Renesas TOLL technology features ultra-compact, leadless designs that enhance thermal performance and reliability. The Wettable Flank solution supports reliability and ease of assembly. Renesas' split gate technology is suitable for applications requiring low R_DS(on) and switching capability for high-power and high-frequency applications.
 

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Renesas

RBA300N10EANS-3UA02

REXFET-1 N-Channel Power MOSFET 100V-340A-1.5mΩ designed for high current switching applications. This product adopts the latest Split Gate Technology.

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The TP65H030G4PWS, 650V, 30mΩ Gallium Nitride (GaN) FET in a TO-247 package is a normally-off device using Renesas' Gen IV plus SuperGaN^® platform. It combines a high-voltage GaN High Electron Mobility Transistor (HEMT) with an optimized low voltage silicon MOSFET to offer superior performance, standard drive, ease of adoption, and enhanced reliability.
 

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Renesas

TP65H030G4PQS

The TP65H030G4PQS, 650V, 30mΩ Gallium Nitride (GaN) FET in a TOLL package is a normally-off device using Renesas' Gen IV plus SuperGaN® platform.

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The TP65H030G4PWS is a 650V, 30mΩ Gallium Nitride (GaN) FET built on Renesas’ Gen IV plus SuperGaN^® platform, delivering superior performance and reliability. By combining a high-voltage GaN HEMT with a low-voltage silicon MOSFET, it offers standard drive capability and ease of adoption. Advanced epi and patented design technologies reduce gate charge, output capacitance, crossover loss, and reverse recovery charge, enabling higher efficiency compared to traditional silicon solutions.
 

Product highlights

Renesas

TP65H030G4PWS

The TP65H030G4PWS, 650V, 30mΩ Gallium Nitride (GaN) FET in a TO-247 package is a normally-off device using Renesas' Gen IV plus SuperGaN® platform.

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R9A06G061 is a narrow-band power line communication modem IC that consists of analog front-end (AFE), DSP, and MCU. The high-performance DSP performs OFDM modulation and demodulation signal processing (PHY layer), and the MCU handles protocol conversion to/from the host interface. R9A06G061 enables high-speed and stable long-distance communication Peer-to-Peer (P2P) networks. Especially, R9A06G061 has improved direct drive capability in order to expand its use in DC power supply system applications.