Powering the Clean Energy Transition
Innovating Power Technologies for Efficiency, Reliable Renewable Energy Systems
Renesas solutions for battery management, energy generation and harvesting, power line communication, and renewable energy play an important role in energy infrastructure. We aim to develop products and solutions that drive the clean energy transition.
- RA6T2 MCU
- RA2A2 MCU
- RBA300N10EANS-3UA02
- TP65H030G4PQS
- TP65H030G4PWS
- R9A06G061
The Renesas RA6T2 Group is the second RA ASSP product targeting for motor and inverter control solutions. The RA6T2 combines an Arm Cortex®-M33 with a hardware accelerator for motor control and high-speed flash memory for high-speed real-time performance at 240MHz. It can also realize next-generation high-speed, high-response motor algorithms and improve parallel processing performance such as other communication processing.
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The RA2A2 MCU combines a 48 MHz Arm® Cortex®‑M23 core with segment LCD support and high-precision analog sensing for low-power, cost-efficient designs. Featuring dual-bank flash for easy firmware updates and integrated security, it delivers reliability and optimized performance for diverse applications.
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Renesas
RA2A2
48MHz Arm Cortex-M23 Ultra-Low Power General-Purpose Microcontroller with Rich Peripherals.
Renesas TOLL technology features ultra-compact, leadless designs that enhance thermal performance and reliability. The Wettable Flank solution supports reliability and ease of assembly. Renesas' split gate technology is suitable for applications requiring low RDS(on) and switching capability for high-power and high-frequency applications.
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Renesas
RBA300N10EANS-3UA02
REXFET-1 N-Channel Power MOSFET 100V-340A-1.5mΩ designed for high current switching applications. This product adopts the latest Split Gate Technology.
The TP65H030G4PQS, 650V, 30mΩ Gallium Nitride (GaN) FET in a TOLL package is a normally-off device using Renesas' Gen IV plus SuperGaN® platform. It combines a state-of-the-art high voltage GaN High Electron Mobility Transistor (HEMT) with an optimized low voltage silicon MOSFET to offer superior performance, standard drive, ease of adoption, and enhanced reliability.
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Renesas
TP65H030G4PQS
The TP65H030G4PQS, 650V, 30mΩ Gallium Nitride (GaN) FET in a TOLL package is a normally-off device using Renesas' Gen IV plus SuperGaN® platform.
The TP65H030G4PWS is a 650V, 30mΩ Gallium Nitride (GaN) FET built on Renesas’ Gen IV plus SuperGaN® platform, delivering superior performance and reliability. By combining a high-voltage GaN HEMT with a low-voltage silicon MOSFET, it offers standard drive capability and ease of adoption. Advanced epi and patented design technologies reduce gate charge, output capacitance, crossover loss, and reverse recovery charge, enabling higher efficiency compared to traditional silicon solutions.
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Renesas
TP65H030G4PWS
The TP65H030G4PWS, 650V, 30mΩ Gallium Nitride (GaN) FET in a TO-247 package is a normally-off device using Renesas' Gen IV plus SuperGaN® platform.
R9A06G061 is a narrow-band power line communication modem IC that consists of analog front-end (AFE), DSP, and MCU. The high-performance DSP performs OFDM modulation and demodulation signal processing (PHY layer), and the MCU handles protocol conversion to/from the host interface. R9A06G061 enables high-speed and stable long-distance communication Peer-to-Peer (P2P) networks. Especially, R9A06G061 has improved direct drive capability in order to expand its use in DC power supply system applications.
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Resources
- Blog: Powering the shift: A complete level 2 EV charging solution for the future of mobility
- Whitepaper: A PV and battery energy storage based-hybrid inverter architecture addressing future energy demands
- Whitepaper: Single stage microinverter topology: A full system design solution for both on/off-grid applications
Renesas Winning Combinations links