Nexperia - Enabling New Energy Infrastructure
Silicon Carbide (SiC) devices, such as MOSFETs and diodes, are increasingly used in the field of new energy infrastructure due to their superior properties compared to traditional silicon-based devices. Their applications in new energy infrastructure are vast and growing as industries shift toward more efficient and sustainable power electronics. Improved power density, reliability and longevity, reduced cooling requirements, cost reduction in the long term are the key driving factors. Nexperia has a wide choice of device with different technical parameters and packages to cater this fast moving market and proven system level performance benefits.
- SiC MOSFETs in Single-Side Cooled X.PAK
- SiC Schottky Diodes
- SiC Schottky Diodes
Product highlights
Nexperia
1200V SiC MOSFET in X.PAK
Nexperia introduces a range of highly efficient and robust industrial grade 1200 V silicon carbide (SiC) MOSFETs with industry leading temperature stability in innovative surface-mount (SMD) top-side cooled packaging technology called X.PAK.
Product highlights
Nexperia
SiC MOSFET NSF030120D7A0
Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. Product of choice in high power and high voltage industrial applications.
Product highlights
Nexperia
1200 V SiC Schottky Diodes
For ultra high performance, low loss, high efficiency power conversion applications. Temperature independent capacitive turn-off, zero recovery switching with an outstanding figure-of-merit (QC x VF) and robustness.
Videos
Switching Performance of Silicon Carbide vs. Silicon Diodes – SiC Basics
Explore how material properties drive switching performance in SiC vs. Si diodes, and why SiC helps designers achieve higher efficiency and power density in more compact power designs.
MPS Silicon Carbide Power Diodes Explained – SiC Basics
See how Merged Pin Schottky (MPS) SiC diodes combine Schottky and P‑N benefits to reduce leakage, increase surge rating, and deliver stronger robustness than basic SiC diodes.
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