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Bourns BID series Insulated Gate Bipolar Transistor (IGBT) discrete

Bourns announces BID series Insulated Gate Bipolar Transistor (IGBT) discrete

Bourns announces BID series Insulated Gate Bipolar Transistor (IGBT) discrete

Bourns, Inc., a leading manufacturer and supplier of electronic components, is pleased to introduce the model BID series Insulated Gate Bipolar Transistor (IGBT) discrete dolution. By combining technology from a MOSFET gate and a bipolar transistor, the Bourns® IGBT discrete BID series creates a component designed for high voltage and high current applications. This device uses advanced trench-gate field-stop technology to provide greater control of the dynamic characteristics, which, in turn, results in a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, due to the thermally efficient TO-252, TO-247 and TO-247N packages, the devices can provide a lower thermal resistance Rth(j-c), making them suitable IGBT solutions for Switch-Mode Power Supplies (SMPS), Uninterruptible Power Sources (UPS) and Power Factor Correction (PFC) applications.

 

Features

Model BIDD05N60T

  • 600V, 5A, low Collector-Emitter Saturation Voltage (VCE(sat))
  • Trench-gate field-stop technology
  • Optimized for conduction
  • Robust
  • RoHS compliant*

Model BIDW20N60T

  • 600V, 20A, low Collector-Emitter Saturation Voltage (VCE(sat))
  • Trench-Gate field-stop technology
  • Optimized for conduction
  • Low switching loss
  • RoHS compliant*

Model BIDW30N60T

  • 600V, 30A, low Collector-Emitter Saturation Voltage (VCE(sat))
  • Trench-Gate field-stop technology
  • Optimized for conduction
  • RoHS compliant*

Model BIDW50N65T

  • 650V, 50A, low Collector-Emitter Saturation Voltage (VCE(sat))
  • Trench-Gate field-stop technology
  • Optimized for conduction
  • RoHS compliant*

Model BIDNW30N60H3

  • 600V, 30A, low Collector-Emitter Saturation Voltage (VCE(sat))
  • Trench-Gate field-stop technology
  • now switching loss
  • Fast switching
  • RoHS compliant*

 

Applications

Model BIDD05N60T

  • SMPS
  • UPS
  • PFC

Model BIDW20N60T

  • SMPS
  • UPS
  • PFC
  • Stepper motors

Model BIDW30N60T

  • SMPS
  • UPS
  • PFC
  • Induction heating

Model BIDW50N65T

  • SMPS
  • UPS
  • PFC
  • Inverters

Model BIDNW30N60H3

  • SMPS
  • UPS
  • PFC
  • Induction heating

* RoHS Directive 2015/863, Mar 31, 2015 and Annex.

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Bourns BID Series Insulated Gate Bipolar Transistor (IGBT) Discrete | Avnet Abacus

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