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Nexperia ASFET with enhanced dynamic current sharing

ASFET - Automatic current balancing for reliable high power MOSFET paralleling

In high-power applications, it is common practice to connect two or more MOSFETs in parallel to provide high current capability. Even when the gates are driven from the same gate driver, it can be challenging to ensure that MOSFETs share the load current equally.

Small differences in VGS(th) for individual devices cause the MOSFET with the lowest VGS(th) to turn-on first, taking a larger share of the load current during the dynamic switching phase. The difference in load current between individual MOSFETs (ΔID) can be significant often leading to differential heating and potential accelerated failure. One method to reduce the ΔI between MOSFETs is to select devices with matched VGS(th), but testing & sorting MOSFETs with matched VGS(th) can be a difficult process. VGS(th) is typically measured at ΔID ≤ 1 mA and is influenced by temperature also.

ASFETs with enhanced dynamic current sharing are designed to show significantly improved current sharing with low ΔID when connected in parallel applications..

Features and Benefits

Removes the need for VGS(th) matching
Low ΔID enhances current sharing in parallel applications
Reduced VGS(th) spread
Low RDSon
286 A continuous ID Max
Avalanche rated, 100% tested
Compact and Reliable 8x8 LFPAK88 package, qualified to 175 °C

Applications

Applications using MOSFETs in parallel
Applications utilizing MOSFETs with matched VGS(th)
High-power motor control

Product portfolio

Part number	Product description	VDS [max] (V)	RDSon [max] @ VGS = 10 V (mΩ)	Datasheet	Order Samples at Farnell
PSMN1R9-80SS	N-channel 80 V, 1.9 mOhm ASFET with enhanced dynamic current sharing in LFPAK88	80	1.6	Download datasheet	Buy now
PSMN2R3-100SS	N-channel 100 V, 2.3 mOhm ASFET with enhanced dynamic current sharing in LFPAK88 electrothermal model	100	1.85	Download datasheet	Buy now