Nexperia 650 V SiC Schottky diode in X.PAK for automotive applications
Zero-recovery performance with efficient top-side heat dissipation
Leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The 650V, 20A SiC Schottky diode encapsulated in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.
Features and Benefits
- Zero forward and reverse recovery
- Temperature independent fast and smooth switching performance
- Outstanding figure of merit (Qc x VF)
- High IFSM capability
- High power density
- System miniaturization
- Reduced EMI
- Qualified according to AEC-Q101 and recommended for use in automotive applications
Applications
- Traction inverter
- DC-DC converter
- Onboard charger
Product portfolio
| Part number | Product description | Datasheet |
|---|---|---|
| PSC2065T2A0-Q | 650 V, 20 A SiC Schottky diode in X.PAK | Download datasheet |
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