Nexperia 650 V Cascode GaN FETs

Nexperia expands its 650 V Cascode GaN portfolio with new devices designed to meet the increasing efficiency and power-density demands of high-power infrastructure applications. Built on a proven GaN Cascode architecture, these additions deliver fast switching performance, improved thermal behaviour, and enhanced system efficiency, without adding design complexity or requiring new drive techniques.

Available in industry-standard packages including TOLL, TOLT, and TO-247 (3- and 4-lead), the extended portfolio supports scalable, high-volume deployment and multi-sourcing strategies. The devices target demanding applications such as datacentre and telecom power supplies, renewable energy systems including PV inverters and battery energy storage, and high-voltage industrial power, where designers are pushing beyond the limits of conventional silicon technologies.

Features and Benefits

• Simplified driver design as standard MOSFET gate drivers can be used:
  • 0 V to 10 or 12 V drive voltage
• Robust gate oxide with ±20 V VGS rating
• High gate threshold voltage for gate bounce immunity
• Low body diode VF for reduced losses and simplified dead-time adjustments
• Transient over-voltage capability for increased robustness

Applications

• Data center and telecom power supplies (1–12 kW PSU, AC-DC and DC-DC)
• Renewable energy power conversion (PV inverters and auxiliary supplies)
• Battery Energy Storage Systems (BESS)
• Industrial motor drives and automation power

Product portfolio

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