Power Solutions That Move the Future
Celebrating 30 Years of a successful Partnership
Over the past 30 years, EBV Elektronik and Toshiba have built more than a partnership - together, we have created a trusted collaboration driven by innovation, reliability, and a shared vision for the future.
From powering industrial innovation to enabling technologies that move the world, our journey has been shaped by strong connections, mutual trust, and continuous progress.
Now, we proudly celebrate 30 years of collaboration - and look ahead to many more opportunities, ideas, and innovations to come.
Some Partnerships Just Grow Stronger.
A trusted foundation, with much ahead.
Excellence in power defines Toshiba Electronics Europe GmbH (Toshiba). The company delivers advanced semiconductor solutions and components designed to meet the highest standards of technology, quality, and sustainability. Its products enable engineers to optimise performance, reliability, and energy efficiency across critical applications, supporting the transition to an all-electric society.
Toshiba focuses on key sectors such as e-mobility, energy and infrastructure, factory automation, and AI/data centres, continuously expanding its product range and manufacturing capacity to meet growing demand. Toshiba's broad portfolio includes power semiconductors and other discrete devices ranging from diodes to logic ICs, power MOSFETs, optical semiconductors as well as motor control devices and application specific standard products (ASSPs) amongst others. The company focusses on power systems design as well as on motor control solutions and customers can benefit from more than 40 years of core competence optimizing solutions for power density and efficiency. In addition, Toshiba provides also lithium titanium oxide (LTO) batteries (SCiB™) for heavy-duty applications and HDD solutions.
Headquartered in Düsseldorf, Germany, Toshiba Electronics Europe operates branch offices in France, Italy, Spain, Sweden, and the United Kingdom, offering marketing, sales, and logistics services across Europe.
Featured product highlights
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SiC MOSFET Module
Toshiba’s 2200V SiC MOSFET Module with on die integrated SBD, enables high-efficiency power conversion systems with 1500V DC-link.
It reduces switching and conduction losses, supports higher PWM-frequencies, and simplifies system design.
Ideal for PV, EV charging, and energy systems, it delivers smaller size, lower thermal needs, and improved reliability compared to silicon-based solutions.
650V 3rd gen SiC MOSFETs in TOLL - compact, efficient, fast
Toshiba’s TW027U65C, TW048U65C and TW083U65C bring 3rd generation SiC performance to a surface mount TOLL package that cuts device volume by >80% vs. TO 247. The Kelvin source layout enables low inductance, high speed switching — the TW048U65C achieves ~55% lower Eon and ~25% lower Eoff than a non Kelvin TO 247 equivalent.
Stable RDS(on) over temperature, low RDS(on) × Qgd FOM and a wide −10…25 V VGSS range simplify gate drive design across SMPS, UPS, EV chargers and PV inverters.
Why Toshiba: Strong SiC roadmap, advanced packaging and reliable parametrics that boost efficiency and power density.
100 V MOSFET with 2.7 mΩ RDS(on)
Toshiba’s TPH2R70AR5 delivers a 42% FoM improvement (RDS(on)×Qg) over U MOSX H devices, achieving just 2.7 mΩ max RDS(on) and 52 nC Qg. Lifetime controlled body diode technology cuts Qrr to 55 nC and suppresses voltage spikes, boosting efficiency in high performance DC DC converters for data centre, telecom and industrial SMPS designs.
With a 190 A ID rating, 175 °C channel temperature capability and a 5.15 mm × 6.1 mm SOP Advance (N) footprint, the device supports high power density and easy mounting compatibility.
Why Toshiba: Latest gen U MOS11 H process, superior switching and diode performance, and robust design tools (G0/G2 SPICE models) that simplify precision power stage development.
Compact automotive BLDC gate driver IC with single shunt support
Toshiba’s TB9084FTG is a cost‑effective gate‑driver IC for three‑phase BLDC motors used in automotive body systems, pumps, fans and motor‑generator units. It integrates a charge pump, current‑sense amplifier, oscillator, SPI and comprehensive fault‑detection circuits — all in a compact 6×6 mm VQFN36 package enabled by an optimised circuit architecture.
The device supports single‑shunt current sensing, offers robust AEC‑Q100 Grade 0 reliability (‑40 °C to +150 °C), and features a wettable‑flank package for easy solder‑joint inspection. Its strong functional integration simplifies miniaturisation and enhances system design flexibility.
Why Toshiba: Deep automotive expertise, proven gate driver architecture, Grade 0 quality and packaging innovations that boost reliability while shrinking system size.
Next gen stepper motor driver with Advanced Microstep Technology
Toshiba’s TB67S579FTG brings a new generation of stepper motor control to office, commercial and industrial equipment. Its Advanced Microstep Technology combines AGC2, Automatic Wave Generation (AWGS) and Continuous Microstepping for higher efficiency, smoother motion, and significantly reduced vibration and noise, even at low speeds.
The driver integrates advanced functions such as ACDS current detection (no external sense resistor), a built in charge pump, serial configuration, and ADMD for up to 30% higher rotation speed. With 40 V / 2 A capability, low 0.6 Ω RDS(on) and a compact 7×7 mm VQFN48 package, it cuts board space and BOM while providing robust protection features including overcurrent, thermal shutdown, UVLO, open load and stall detection.
Why Toshiba: Best in class microstepping innovation, integrated efficiency boosting features, and space saving architecture that simplifies precise motion control designs.
SOP Advance(E) MOSFETs with lower RDS(on) & improved thermal performance
Toshiba’s new 80 V TPM1R908QM and 150 V TPM7R10CQ5 bring the next‑generation SOP Advance(E) package to high‑efficiency SMPS designs for industrial equipment, data centres and communication base stations. The package cuts package resistance by ~65% and thermal resistance by ~15%, enabling significantly lower loss and higher power‑stage efficiency.
Both devices deliver ~21% lower RDS(on) and ~15% lower Rth(ch‑c) compared to previous equivalents, with the 150 V TPM7R10CQ5 additionally featuring a high‑speed body diode for improved synchronous rectification. Rated up to 238 A / 1.9 mΩ (80 V) and 120 A / 7.1 mΩ (150 V), the MOSFETs operate up to 175 °C in a compact 4.9 × 6.1 mm footprint, reducing board space and supporting higher density designs.
Why Toshiba: Advanced packaging that delivers real efficiency gains, strong thermal behaviour and industry‑leading low‑loss MOSFET performance, supported by G0/G2 SPICE models for fast, accurate power‑stage design.
Power MOSFET, N Channel, 600 V
The Toshiba TK058V60Z5 is a 600V N‑channel super junction MOSFET featuring a built‑in high‑speed recovery diode for improved switching performance. With ultra‑low RDS(ON) of 0.050Ω (typ.) combined with low Qgd and a compact DFN8×8 package, it reduces conduction and also switching losses while supporting high power density.
The wider DTMOSVI 600V HSD series offers flexible package options for efficient SMPS and inverter designs.
40V N‑channel MOSFET
The Toshiba TPHR6704RL is a 40V N‑channel MOSFET manufactured using advanced process technology, delivering ultra‑low on‑resistance and fast switching. Compared to previous 40V generations, it significantly reduces conduction and switching losses, improves EMI performance, and boosts efficiency. The SOP Advance package enables easy replacement in high‑current industrial power designs.
Power MOSFET, N Channel, 600V
The Toshiba TK057V60Z is a 600V N‑channel super junction MOSFET featuring ultra‑low RDS(ON) of 0.047Ω and low gate charge for high efficiency.
Based on the DTMOSVI process and housed in a compact DFN8×8 package, it enables higher power density, reduced losses and smaller designs.
Ideal for modern industrial power supplies requiring efficiency and compactness.
Whitepapers
Second Sourcing Motor Drivers Without Redesign
Supply chain disruptions and product discontinuations put production at risk. This whitepaper shows how drop in compatible Toshiba motor driver ICs enable robust second sourcing strategies for brushed DC and stepper motor applications without costly redesigns or requalification.
Why Toshiba: Toshiba offers drop in compatible motor drivers with comparable or improved electrical performance, integrated protection features, and long term availability, helping OEMs reduce risk while maintaining design stability.
Accelerating SiC Power Converter Development
Evaluating new SiC devices and topologies can slow innovation. This whitepaper introduces Toshiba’s modular “SiC Cube” approach, enabling rapid comparison and reuse of power converter building blocks across PFCs, DC/DC converters, and inverters.
Why Toshiba: Toshiba combines advanced SiC MOSFET technology with a modular reference design philosophy supporting engineers shorten development cycles while achieving high efficiency, power density, and design flexibility.
Reliable Digital Isolation for High Speed Industrial Systems
As industrial systems move to higher switching frequencies and data rates, conventional isolation reaches its limits. This whitepaper explains how Toshiba’s magnetic coupling digital isolators deliver high speed, long insulation life, and strong common mode transient immunity.
Why Toshiba: Toshiba’s digital isolators combine compact integration, high CMTI performance, and long term reliability. These features make them highly suitable for demanding industrial and power electronics designs.
Efficient FOC for Automotive BLDC Motors
Field oriented control improves efficiency and acoustic performance, but increases software and CPU load. This whitepaper shows how Toshiba’s SmartMCD™ integrates MCU, vector engine, and gate drivers to simplify high performance BLDC motor control.
Why Toshiba: With SmartMCD™, Toshiba delivers a highly integrated motor control solution that reduces system complexity, lowers CPU load, and accelerates time to market for automotive applications.
Simplifying Heat Pump Control Electronics
Modern heat pumps demand precise motor control, PFC, and system coordination. This whitepaper demonstrates how a single Toshiba MCU with dedicated hardware accelerators can efficiently control compressors, fans, and power stages.
Why Toshiba: Toshiba combines MCUs, power devices, and reference designs optimised for energy efficient heating systems. This combination enables cost efficient, and scalable heat pump designs.
SiC Snacks - Key SiC MOSFET Design Advantages Explained
From RDS(ON) x Qgd figures of merit to built in Schottky barrier diodes, this collection of short technical insights highlights how Toshiba’s SiC MOSFETs help improve efficiency, reduce losses, and simplify thermal design.
Why Toshiba: Toshiba’s third generation SiC MOSFETs combine low losses, robust gate ratings, and advanced device integration, supporting reliable, high performance power conversion.