Toshiba Power MOSFET, N Channel, 600 V
600V super junction MOSFET with fast body diode and low RDS(ON) for efficient, compact SMPS and inverter designs
The Toshiba TK058V60Z5 is a 600V N‑channel super junction MOSFET featuring a built‑in high‑speed recovery diode for improved switching performance. With ultra‑low RDS(ON) of 0.050Ω (typ.) combined with low Qgd and a compact DFN8×8 package, it reduces conduction and also switching losses while supporting high power density.
The wider DTMOSVI 600V HSD series offers flexible package options for efficient SMPS and inverter designs.
Key features
- 600V super junction MOSFET: ideal for high‑voltage power applications
- Ultra‑low RDS(ON) 0.050Ω typ.: lower conduction losses
- High‑speed body diode: reduced reverse recovery loss
- Fast reverse recovery: improved efficiency in bridge and inverter circuits
- Optimised gate design: lower switching and drive losses
- Compact DFN8×8 option: enables high power density and miniaturisation
- Multiple package options: DFN8×8, TOLL, TO‑247 for design flexibility
Applications
- Switched‑mode power supplies (SMPS)
- Data centre server power supplies
- Uninterruptible power supplies (UPS)
- Photovoltaic power conditioners
- Industrial inverters and power conversion systems
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