Toshiba SiC MOSFET Module
Toshiba's 2200V SiC MOSFET module boosts power conversion system efficiency, cuts losses, and enables compact high-power designs
Toshiba’s 2200V SiC MOSFET Module with on die integrated SBD, enables high-efficiency power conversion systems with 1500V DC-link.
It reduces switching and conduction losses, supports higher PWM-frequencies, and simplifies system design.
Ideal for PV, EV charging, and energy systems, it delivers smaller size, lower thermal needs, and improved reliability compared to silicon-based solutions.
Key features
- 2200V SiC MOSFET: enables 1500V systems – higher efficiency & design flexibility.
- Dual module design: fewer components – simpler, smaller inverter systems.
- Low VDS(on) (0.7V): reduced conduction losses – improved energy savings.
- Low switching losses: less heat – smaller cooling & compact designs.
- High current (250A/500A): supports demanding power applications
- 4000Vrms isolation: ensures safety – reliable high-voltage operation.
- High temp. (150°C): robust performance – harsh environment suitability.
- Integrated SBD: improves reverse conduction – higher reliability.
- 37% lower loss vs Si: boosts system efficiency – reduced operating cost
- Higher switching freq.: enables smaller passive components.
Applications
- Photovoltaic (PV) inverters (1500V DC systems)
- EV charging infrastructure
- High-frequency DC/DC converters
- Energy storage systems (ESS)
- Industrial power converters
- Two-level inverter systems
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