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Vishay TSSP770
Vishay Semiconductors TSSP770 Infrared (IR) Receiver is a compact module for reflective sensor, light barrier, and fast proximity applications. While Vishay is the world’s leading supplier of IR receivers for remote control, there is an entire produc |
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Telit Cinterion® ELS62-W
The Telit Cinterion ELS62 module with 2G fallback provides full design flexibility, fast time-to-market, and future proof technology ideal for security and alarm solutions, smart cities, and many more. The single antenna design module enables device |
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Nexperia PESDxETH1Gxx-Q
To take the next step in automotive connectivity and electrification, high-speed and high bandwidth Automotive Ethernet is required. Industry leaders collaborate within the OPEN Alliance SIG to encourage Ethernet adoption in cars. But with more advan |
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STMicroelectronics STM32WB15CCU6
The STM32WB15CC multiprotocol wireless and ultra-low-power device embeds a powerful and ultra-low-power radio compliant with the Bluetooth® Low Energy SIG specification 5.3. It contains a dedicated Arm® Cortex®-M0+ for performing all the real-time lo |
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Toshiba Electronics Europe TCK421G
The MOSFET gate driver IC TCK421G controls the gate voltage of external N-channel MOSFETs based upon the input voltage.It is suitable for configuring a power multiplexer or a load switch circuit equipped with reverse-current blocking by being combine |
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Toshiba Electronics Europe TPH9R00CQH
TPH9R00CQH uses the latest generation U-MOSX-H process to significantly reduce losses. Additionally, voltage spikes between the Drain and Source during switching have been reduced, thereby improving EMI performance within switching power supplies. T |
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Nexperia new SD card level translator
The NXS0506UP Housed in a 16-bump wafer-level chip-scale package the SD 3.0-compliant bi-directional dual voltage level translator has a footprint measuring 1.45mm x 1.45mm x 0.45mm, 0.35mm pitch, 40% smaller than previous 20 bump devices. The NXS050 |
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Toshiba Electronics Europe TC78B011FTG
This Three-phase BLDC pre-driver IC is a feature-rich device that incorporates the complete controller and pre-driver for a three-phase BLDC motor. Its sensor less design saves the space and cost of a Hall sensor. The built-in closed loop speed contr |
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Nexperia 50 µA Zener diodes
Specified at a low test current Nexperia’s 50 µA Zener diodes are ideal for low bias and portable battery-powered applications. The diodes range is available in three different surface-mountable (SMD) package options, in an ultra-small Discretes Flat |
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Tria MSC C6B-ALP
The Tria MSC C6B-ALP COM Express module features the 12th Gen Intel® Core™ processor, giving application designers a great variety of choices of power efficient and performant compute solutions. Offering a great scalability of performance the module |
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Power Integrations InnoSwitch™3-AQ
The two new AEC-Q100 qualified, 1700 V-rated ICs of the InnoSwitch3™-AQ family are the industry’s first automotive-qualified switching power supply ICs to incorporate a silicon carbide (SiC) primary switching MOSFET. Delivering up to 70 W of output |
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Broadcom AEAT-9955
The Broadcom AEAT-9955 is an angular magnetic rotary sensor that provides accurate angular measurement over a full 360 degrees of rotation. A sophisticated system uses integrated Hall sensor elements with complex analog and digital signal processing |
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onsemi EliteSiC MOSFET Module 1200V
The NXH020F120MNF1 is a EliteSiC MOSFET module containing a 20 mohm EliteSiC MOSFET full bridge and an NTC thermistor in an F1 4-PACK module. Key features Recommended gate voltage 18V - 20VLow thermal resistanceOptions for TIM or no TIMPress−Fit |
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onsemi EliteSiC MOSFET M3S Family 1200V
The new family of 1200V M3S planar EliteSiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with |
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Toshiba Electronics Europe TLP223GA and TLP223J
Low power photorelays TLP223GA and TLP223J normally open (NO) 1-FORM-A products that consist of a MOSFET optically coupled to an infrared LED They can be utilized where it is desirable to replace a mechanical relay with a solid-state device. Both p |
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Infineon Technologies OPTIGA™ TPM SLB 9672 FW16.xx
OPTIGA™ TPM SLB 9672 FW16.xx is one of the latest products in a new generation of future-proof OPTIGA™ TPMs. It is optimized for connected devices, offering enhanced security features. This standardized, out-of-the-box TPM provides a solid foundatio |
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Infineon Technologies EiceDRIVER™ F3 enhanced
The EiceDRIVER™ F3 Enhanced (1ED332x) family is an isolated gate driver family including protection features, such as short-circuit protection (DESAT), soft-off and active Miller Clamp. The gate driver family provides typical peak output currents of |
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Infineon Technologies OPTIGA™ TPM SLB 9672 FW15.xx
OPTIGA™ TPM SLB 9672 FW15.xx is one of the latest products in a new generation of future-proof OPTIGA™ TPMs. This standardized and certified security solution is the primary choice for Microsoft Windows environments/ecosystems and connected devices |
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Infineon Technologies MERUS™ multichip module
The MERUS™ MA5332MS multichip module offers the same or even higher output power as monolithic alternatives without a heatsink and 50 percent less footprint. This MCM (multi-chip module) solution integrates a dual-channel PWM controller, a high-volta |
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Lumissil T31 smart video processors
The VPU (Video Processing Unit) core is a video encoder engine designed to process video streams using the HEVC (ISO/IEC 23008-2 High Efficiency Video Coding) and AVC (ISO/IEC 14496-10 Advanced Video Coding) standards. It also supports still picture |
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Ezurio (Laird) Sterling™-LWB+
Laird Connectivity’s new Sterling™-LWB+ Wi-Fi 4 with Bluetooth 5.2 module, based upon the Infineon AIROC™ CYW43439 chipset, is the latest member of the successful Sterling-LWB radio family. This embedded module series is available as a System-in-Pack |
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Toshiba Electronics Europe TLX9160T
The TLX9160T is Toshiba’s first device with a high output withstand voltage (VOFF) of at least 1500V.The device is capable of operating from a supply voltage (VDD) of up to 1000V, ensuring that it is compatible with the vast majority of traction batt |
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Arduino Portenta cat. M1/NB IoT shield
Boost the global connectivity and positioning power of your Portenta or MKR board with the Arduino® Portenta Cat. M1/NB IoT GNSS Shield. Dive into cellular connectivity on Cat. M1 and NB-IoT networks, and even tap into eSIM technology. Track assets e |
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Toshiba Electronics Europe TLP5705H and TLP5702H
Toshiba’s insulated gate drivers TLP5705H and TLP5702H for small to medium capacity IGBTs/MOSFETs. The TLP5705H is Toshiba’s first product to deliver a peak output current rating of ±5.0A in a thin SO6L package, while the TLP5702H has a peak output |
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Toshiba Electronics Europe load-switch ICs
Toshiba load-switch ICs offer a low on-resistance for high efficiency switching results, important for power saving and thermal management. The low quiescent current improves long life operation of battery powered systems. Auto discharge, slew-rate c |
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Toshiba Electronics Europe TCR3RMxxx
The TCR3RM series is constructed in a plastic DFN4C package measuring 1.00mmx1.00mmx0.38 mm and comprises 32 product variants with fixed single output voltages in the range 0.9 VDC to 4.5 VDC. Unlike other LDO regulators where the ripple rejection r |
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onsemi EliteSiC MOSFET, 650V, 42mΩ
The new generation of EliteSiC MOSFETs employ a novel active cell design combined with advanced thin wafer technology enabling best in class figure of merit RSP (RDS(on)*area) for 650 V breakdown voltage. An internal gate resistor (RG) allows more f |
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onsemi N-channel power mosfet 600V
SUPERFET III MOSFET is onsemi brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize c |
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onsemi 1200V Power integrated module
The NXH80T120L2Q0 is power integrated module containing a T-type neutral point clamped (NPC) three level inverter consisting of two 80 A/1200 V half-bridge IGBTs with 40 A/1200 V half-bridge diodes and two 50 A/600 V NPC IGBTs with two 50 A/600 V NPC |
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STMicroelectronics TSU101, TSU102, TSU104
The TSU101, TSU102, and TSU104 operational amplifiers offer an ultra low-power consumption of 580 nA typical and 750 nA maximum per channel when supplied by 1.8 V. Combined with a supply voltage range of 1.5 V to 5.5 V, these features allow the TSU10 |