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Murata Type 1WL
With just 17 mm × 17.5 mm × 2.15 (max.) mm, Murata developed a multi-technology fused LPWAN geolocation module, offering ultra-low power design for long battery life, superior sensitivity, and high flexibility to build customized low-cost tracking de |
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Murata Type 2DT
With just 9.98 × 8.70 × 1.74 mm, Murata developed a multi-technology fused LPWAN geolocation module, offering ultra-low power design for long battery life, superior sensitivity, and high flexibility to build customized low-cost tracking devices, suit |
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Murata Type 2GT
With just 9.98 × 8.70 × 1.74 (max.) mm, Murata developed a multi-band LoRa connectivity module, offering ultra-low power design for long battery life, superior sensitivity, and Industry-Leading Quality and Reliability to build Cost Optimized end devi |
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Murata Type 2EL
Murata's Type 2EL Module is a small sized LGA Wireless Connectivity Module in an 8.8mm * 7.7mm * 1.3mm max Shielded Resin Mould package. This Module incorporates the IW612 IC, primary Crystal and RF Front End Components. The Module is supporting Wi-F |
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Toshiba TCR3LM
These regulators, housed in the compact DFN4D package, are ideal for IoT and wearable designs, offering significant reductions in power consumption and extending battery life. The TCR3LMxxA series covers a voltage range of 0.8V DC to 5.0V DC with an |
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Vishay Blue VLMB2332T1U2-08 and True Green VLMTG2332ABCA-08 SMD LEDs
Vishay Intertechnology introduces new blue and true green surface-mount LEDs in the ultra compact MiniLED package. Measuring 2.2 mm by 1.3 mm by 1.4 mm, the Vishay Semiconductors VLMB2332T1U2-08 and VLMTG2332ABCA-08 utilize the latest ultrabright InG |
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Vishay SiZF4800LDT 80 V symmetric dual MOSFET
Vishay Intertechnology introduces a new 80 V symmetric dual n-channel power MOSFET that combines high and low side TrenchFET Gen IV MOSFETs in a single 3.3 mm by 3.3 mm PowerPAIR 3x3FS package. For power conversion in industrial and telecom applicati |
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Vishay Gen 3 1200 V SiC Schottky diodes
Vishay introduced 16 new Gen 3 1200 V silicon carbide (SiC) Schottky diodes. Featuring a merged PIN Schottky (MPS) design, the Vishay Semiconductors devices combine high surge current robustness with low forward voltage drop, capacitive charge, and r |
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Vishay VSMA1094750X02 AEC-Q102 qualified IR emitter
Vishay Intertechnology broadens its optoelectronics portfolio with the release of eight new AEC-Q102 qualified 850 nm and 940 nm high power infrared (IR) emitters that deliver best in class radiant intensity in 3.4 mm by 3.4 mm surface-mount packages |
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Vishay VOIH72A 25 MBd Optocoupler
VOIH72A 25 MBd Optocoupler features digital input and output to simplify designs and lower costs for Industrial applications. Combines a low 6 ns pulse width distortion and low supply current with high temperature operation to +110°C. Key feature |
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Toshiba High-Speed photocouplers for industrial 24V I/O modules
Slow rising 24V input signals are common in industrial applications and can trigger high-speed isolator outputs to oscillate on their output. Toshiba’s new series of photocouplers are designed to accept these being compliant to IEC 61131-2 Type 1. Th |
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Toshiba 650V 95mOhm high speed diode MOSFET
TK095N65Z5 is one of the first high-speed diode (HSD) type products in the latest generation DTMOS VI series. It is housed in a TO-247 package. Compared to the standard DTMOS VI products, the TK095N65Z5 achieve a 65% reduction in reverse recovery tim |
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Lumissil IS32FL3202
The IS32FL3202 is a three-channel smart LED controller. Each channel supports 6-bit current adjustment for color setting and 16-bit PWM for smooth LED dimming control. To minimize EMI, the IS32FL3202 supports spread spectrum on the PWM clock generato |
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Everlight ELSH-F81C1-0LPGS-C5700
Enhance the ambient vibe when you drive with the 67-63-RGB0201H-AM automotive multi-LED. Key features Simplified circuit design Applications Wearables |
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Everlight EL3534-RGBISE0391L-AM
Smart RGB LED combine serial communication with ISELED compliance. 8 bit brightness resolution for red, green, and blue LED develop advanced technology. This Smart RGB LED allows that colour, brightness and temperature to be individually addressed an |
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Power Integrations InnoSwitch™3-EP 900 V GaN 75 W
The versatile InnoSwitch3-EP flyback switcher IC family offers a wide range of voltage rating options, making design easy by allowing engineers to select the best switching technology for their application. Members of the family featuring 900 V galli |
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SG Micro SGM8965A-2Q
The SGM8965A-2Q is a dual, high speed CMOS operational amplifier with high input impedance, zero-crossover and low distortion. This device can operate from 2.2V to 5.5V single supply. The SGM8965A-2Q features high speed and low noise. It supports rai |
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SG Micro SGM48211
The SGM48211 is a half-bridge MOSFET driver with 4A peak source and sink output current capability, which makes it possible to drive large power MOSFETs with minimized switching losses. The two channels of high-side and low-side are totally independe |
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SG Micro SGM25006
The SGM25006 is a single channel power distribution switch. The switch operates from a wide range of 2.5Vto 6.5V supply voltage, and is controlled by the nEN/ENpin. The rise time and fall time of the device are controlled internally to avoid inrush c |
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NXP Semiconductors PN7220
Aiming to increase the reach of card and mobile payment, Europay, Mastercard and Visa (EMV) point of sale (POS) terminals are getting more lightweight, replacing hardware security with software and back-end security. Off-the-shelf mobile devices, lik |
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NXP Semiconductors P3S0210
P3S0210BQ is a dual bidirectional I3C-bus 1:2 and 2:1 switch and voltage level translator that can be used for both open-drain as well as push-pull application allowing for I3C-bus and other applications like I²C-bus, SMBus and SPI protocols in a DHV |
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Renesas RA0E1
The RA0E1 group is a basic, simple MCU in the entry line of the RA0 series, offering excellent cost effectiveness and ultra-low power consumption. It delivers up to 32MHz of CPU performance using an Arm Cortex-M23 core with up to 64KB of embedded fla |
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Infineon Technologies 2ED2388S06F
650 V high speed, half-bridge gate driver with typical 0.29 A source and 0.7 A sink currents in DSO-8 package for driving power MOSFETs and IGBTs. Key features Operating voltages (VS node) up to + 650 VNegative VS transient immunity of 100 VInte |
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Infineon Technologies CoolSiC™ MOSFET 650 V
The CoolSiC™ MOSFET discrete 650 V G2 in Thin-TOLL 8x8 is the best 8x8 option to leverage a performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the standard 8x8 and it boasts the .XT interconnect to reduce the therma |
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NXP Semiconductors MC33774
The MC33774 is an 18-Channel battery cell controller IC designed for the most demanding applications. The IC is lifetime qualified for less than 1.5 mV of voltage measurement error over the full temperature and cell voltage range. A fully redundant a |
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NXP Semiconductors EdgeLock SE051
The EdgeLock SE051, an extension to the widely trusted EdgeLock SE050 Plug & Trust secure element family, supports applet updates in the field and delivers proven security certified to CC EAL 6+, with AVA_VAN.5 up to the OS level. Designed for the la |
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Vishay SIHR080N60E-T1-GE3
To provide higher efficiency and power density, Vishay introduces its first fourth-generation 600 V E Series power MOSFET in the new PowerPAK® 8 x 8LR package. Compared to previous-generation devices, Vishay´s n-channel SiHR080N60E slashes on-resista |
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Nexperia SiC MOSFET NSF030120D7A0
Nexperia today announced that it is now offering its industry leading 1200 V silicon carbide (SiC) MOSFETs in D2PAK-7 surface mount device (SMD) packaging, with a choice of 30, 40, 60, and 80 mΩ RDSon values. This announcement follows on from Nexperi |
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onsemi Silicon Carbide Schottky diode
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performan |
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onsemi Gate drivers | NCP51313
NCP51313 offers best in class propagation delay, low quiescent current and low switching current at high frequencies of operation. This device is tailored for highly efficient power supplies operating at high frequencies. NCP51313 is offered in two v |