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STMicroelectronics ILPS22QS
The ILPS22QS is an ultra-compact piezoresistive absolute pressure sensor which functions as a digital output barometer, supporting dual full-scale up to user-selectable 4060 hPa. The device delivers ultra-low pressure noise with very low power consum
STMicroelectronics ILPS28QSW
The ILPS28QSW is an ultracompact, piezoresistive, absolute pressure sensor that functions as a digital output barometer, supporting dual full-scale up to user-selectable 4060 hPa. The device comprises a sensing element and an IC interface that commun
STMicroelectronics TSV631 and TSV631A
The TSV631 and TSV631A devices are single operational amplifiers offering low voltage, low power operation, and rail-to-rail input and output. These devices have a very low input bias current and a low offset voltage making them ideal for application
STMicroelectronics TSV71x
The TSV71x series of single, dual, and quad operational amplifiers offer low-voltage operation, rail-to-rail input and output, and excellent accuracy (Vio lower than 200 μV at 25°C). These devices benefit from STMicroelectronics® 5 V CMOS technology
STMicroelectronics DC-DC switching buck-boost regulator
STBB1-APUR is a fixed frequency, high efficiency, buck-boost DC-DC converter in a 10 pin DFN package. It provides output voltage ranging from 1.2V to 5.5V and input voltages from 2.0V to 5.5V. The device can operate with input voltages higher than, e
STMicroelectronics TSU101, TSU102 and TSU104
The TSU101, TSU102, and TSU104 operational amplifiers offer an ultra low-power consumption of 580 nA typical and 750 nA maximum per channel when supplied by 1.8 V. Combined with a supply voltage range of 1.5 V to 5.5 V, these features allow the TSU10
STMicroelectronics TSB7191, TSB7191A, TSB7192 and TSB7192A
The TSB7191, TSB7191A, TSB7192 and the TSB7192A 22 MHz bandwidth amplifier feature rail-to-rail input and output, which is guaranteed to operate from +2.7 V to +36 V single supply as well as from ±1.35 V to ±18 V dual supplies. These amplifiers have
STMicroelectronics LIS2DU12
LIS2DU12TR is an ultralow-power accelerometer with anti-aliasing and motion detection. This linear 3-axis accelerometer with advanced digital functions whose MEMS and ASIC have been expressly designed to build an outstanding ultralow-power architectu
STMicroelectronics LSM6DSV16X
The LSM6DSV16X is a high-performance, low-power 6-axis small IMU, featuring a 3-axis digital accelerometer and a 3-axis digital gyroscope, that offers the best IMU sensor with a triple-channel architecture for processing acceleration and angular rate
Vishay VEMD8082 - Silicon pin diode
The new silicon PIN photodiode brings a higher level of sensitivity in the visible / near infrared wavelength to biomedical applications such as heart rate and blood oxygen monitoring. The new VEMD8082 features increased reverse light current, decrea
Vishay VETH100A1DD1 - ESD protection diode for Automotive Ethernet
New Automotive Grade bidirectional single-line ESD protection diode in the compact DFN1006-2B package with wettable flanks. Optimized for automotive Ethernet networks in compliance with OPEN Alliance 100Base-T1 and 1000Base-T1 specifications, the spa
STMicroelectronics Battery charger
The L6924D is a fully monolithic battery charger dedicated to single-cell Li-Ion/Polymer battery packs. It is the ideal solution for space-limited applications, like handheld equipment, and digital cameras. It integrates all of the power elements (th
STMicroelectronics ISM330IS MEMS module
The ISM330IS is a 6-axis IMU (inertial measurement unit) system-in-package featuring a 3-axis digital accelerometer and a 3-axis digital gyroscope, boosting performance at 0.59 mA in high-performance mode and enabling always-on low-power features for
STMicroelectronics ISM330ISN MEMS module
ISM330ISNTR is an iNEMO inertial module. It is a system-in-package featuring a 3-axis digital accelerometer and a 3-axis digital gyroscope, boosting performance at 0.59mA in high-performance mode and enabling always-on low-power features for optimal
Microchip LAN8871-I/PUA
The Microchip LAN8870/LAN8871/LAN8872 (LAN887x) family of devices provide a compact, cost-effective, single-port 100BASE-T1/1000BASE-T1 Ethernet physical layer transceiver solution compliant with the IEEE 802.3bw-2015 and IEEE 802.3bp-2016 specificat
Toshiba SmartMCD
A high-performance motor control IC for BLDC and PMSM motors. The TB9M003FG combines gate driver and CPU core in a compact package, reducing system size and cost. Features an Arm® Cortex® CPU and vector engine co-processor for precise control and smo
Toshiba TCWA1225G
RF switch housed in a tiny Wafer-level Chip Scale Package (WCSP) measuring just 1.9mm x 1.9mm – giving a footprint around 10% smaller than similar devices. All-important pads including RF terminals, power and control are placed on the periphery of th
Infineon CIPOS™ Maxi 1200 V IPM IM12BxxxC1 series
High-performance CIPOS™ Maxi transfer molded IPM IM12BxxxC1 series is based on the new 1200 V TRENCHSTOP™ IGBT7 and rapid diode Emcon 7 technology. Thanks to the latest micro-pattern trench design, it delivers ex- ceptional control and performance. T
Infineon IGBT module, single switch, 1.2 kA, 2.3 V, 2400 kW, 150 °C
The well-known IHV B 4.5 kV single switch IGBT module has been upgraded to our latest chip generation, to meet the current and future requirements for industry applications MVD, T&D and Transportation. It features the TRENCHSTOP™ IGBT4 and emitter co
Renesas SLG47910V
The SLG47910V ForgeFPGA provides a small, low power component for common FPGA applications. Using this device, a circuit design is created by programming the one-time programmable (OTP) non-volatile memory (NVM) to configure the interconnect logic, t
Microchip dsPIC33AK128MC106
200MHz, 32-bit dsPIC33A Digital Signal Controller (DSC) with 32/64bit Floating-Point Unit (FPU) and up to 128KB Flash Program Memory and 16KB SRAM Data Memory. High-speed 40MSPS 12-bit ADCs, high-bandwidth 100MHz op amps with low input voltage offset
Lumissil IS31/32CS8979 LED controller IC
With an efficient 8051 core, the IS32CS8979 is designed to operate as an 18-channel LED controller and capacitive touch key controller without an external microprocessor. Each LED channel supports a maximum output current of 60mA and has a voltage to
WeEn BTA450Z-800BT
Planar passivated high commutation three quadrant triac in a IITO3P package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series BT" triac will commutate the full RMS current at the maximum rated jun
Aceinna MCx2101
The MCx2101 family pushes the boundaries of current sensor performance, enabling automotive engineers to maximize the benefits of fast switching SiC/GaN power devices and simplify system design and improve overall efficiency. The xMR technology repre
Toshiba 150V N-channel power U-MOS X-H MOSFET
TPH1100CQ5 and TPH1400CQ5 based on our U-MOS X-H Trench process, are designed for high-performance switching power supplies and are ideal for data centres and industrial applications. They feature improved reverse recovery characteristics, reducing p
onsemi T10 MOSFET, N-Channel, 80V, SO8-FL 5x6
New N-Channel Shielded Gate Trench MOSFET from onsemi T10 80V are Gate shielded technology optimized for power applications. The device technology presents superior figure of merits in terms of RDS(on) *A, and RDS(on) * Qg enabling ultra-low RDSON, a
Power Integrations LinkSwitch-XT2SR
The LinkSwitch-XT2SR IC family is a groundbreaking solution designed to significantly enhance the efficiency of small auxiliary power supplies for appliances, consumer products and industrial applications. Specifically tailored for non-isolated desig
Infineon AIROC™ CYW43022 Wi-Fi 5 + Bluetooth® 5.4 combo
AIROC™ CYW43022 1x1 dual-band (2.4/5 GHz) Wi-Fi 5 (802.11ac) + Bluetooth® 5.4 is an ultra-low-power connectivity device designed to address IoT designs needing minimal power consumption and compact size. Applications such as wearables, IP cameras, an
Infineon EiceDRIVER™ 2ED314xMC12L
All products are available in a 14-pin DSO package with 8 mm input-to-output creepage and provide reinforced isolation. All variants offer dead-time control (DTC) functionality and independent channel operation. This allows the operation as dual-chan
onsemi NXH003P120M3F2
The NXH003P120M3F2PTNG is a power module containing 3 mohm / 1200 V SiC MOSFET half−bridge and a thermistor with Si3N4 DBC in an F2 package. The SiC MOSFET switches use M3S technology and are driven with 18V-20V gate drive. Also available NXH004P120M
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