STMicroelectronics - MOSFETs and Gate Drivers for Industrial

STMicroelectronics offers a wide portfolio of power MOSFETs ranging from -100 to 1700 V, IGBTs with breakdown voltages ranging from 300 to 1700 V and power bipolar transistors ranging from 15 to 1700 V. Due to the improved thermal design of STMicroelectronics’s power electronics systems, our silicon-carbide (SiC) MOSFETs ensure good robustness thanks to the industry’s highest temperature rating of 200 °C and voltage ranging from 650 to 1700 V. As well as, our Gallium Nitride on silicon substrate (GaN/Si) transistors allow highest efficiency and highest power density thanks to outstanding specific dynamic on-state resistance and small capacitances ranging to 100 and 650 V.

With a range spanning from single- to half-bridge and multiple-channel drivers rated for either low- or high-voltage (up to 1500 V) applications, STMicroelectronics also offers galvanically-isolated gate driver ICs for safety and functional requirements, System-in-Package (SiP) solutions integrating high- and low-side gate drivers and MOSFET-based power stages, responding to the industrial market trend towards higher levels of integration and lower development costs.