onsemi NTHL080N120SC1
NTHL080N120SC1 - N‐Channel Silicon Carbide MOSFET 1200 V, 80 mΩ, TO247-3L
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Features
- 1200V rated
- Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A
- High Speed Switching and Low Capacitance
- 100% UIL Tested
Applications
- PFC
- Boost Inverter
- PV Charging
| Product | Compliance | Description | Package | Container | ||
|---|---|---|---|---|---|---|
| Type | Case Outline | Type | Qty. | |||
| NTHL080N120SC1 | Pb-free Halide free |
N‐Channel Silicon Carbide MOSFET 1200 V, 80 mΩ, TO247−3L | TO-247-3LD | 340CX | Tube | 450 |
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