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onsemi FGY75T120SWD

FGY75T120SWD – 1200V, 75A Field Stop VII Discrete IGBT in Power TO247-3L Packaging

ON Semiconductor FGY75T120SWD product sample

Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TP247 3-lead package, FGY75T120SWD offers the optimum performance with low switching and conduction losses for high-efficiency operations in various applications like Solar, UPS and ESS.

 

Features

  • Low switching loss
  • Maximum Junction Temperature- TJ =175℃
  • Positive Temperature Coefficient
  • Smooth and Optimized Switching
  • ​RoHS Compliant

 

Applications

  • Boost and Inverter in Solar System
  • UPS
  • Energy Storage System

 

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