onsemi FFSB0665A
The FFSB0665A SiC Schottky Diode with 650V, 6A, D2PAK uses a completely new technology and is suited for applications like PFC, industrial power and more.
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
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Features
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Applications
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Part electrical specifications
| Product | Compliance | Status | Device grade | Configuration | VRRM (V) | IF(ave) (A) | VF (Max) | Package Type |
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| FFSB0665A | Pb-free/ Halide free |
Active | Commercial | Single | 650 | 6 | 1.75 | D2PAK-3 / TO-263-2 |
Links & Documents |
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Wide Band Gap Technology
Wide Band Gap semiconductor technologies bring significant enabling benefits and enhanced reliability to important high-growth end application areas.
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