Nexperia 1200 V SiC MOSFETs

Nexperia introduces a range of highly efficient and robust industrial grade 1200 V silicon carbide (SiC) MOSFETs with industry leading temperature stability in innovative surface-mount (SMD) top-side cooled packaging technology called X.PAK. This package, with its compact form factor of 14 mm x 18.5 mm, combines the assembly benefits of SMD with the cooling efficiency of through-hole technology, ensuring optimal heat dissipation. This release addresses the growing demand from a broad range of high power (industrial) applications for discrete SiC MOSFETs that harness the advantages of top-side cooling to deliver exceptional thermal performance. These switches are ideal for industrial applications such as battery energy storage systems (BESS), photovoltaic inverters, motor drives, and uninterruptible Power Supplies (UPS). Additionally, they are well-suited for electric vehicle charging infrastructure, including charge piles.

Key features

• Excellent RDSon temperature stability
• Very low switching losses
• Fast reverse recovery
• Fast switching speed
• Temperature independent turn-off switching losses
• Very fast and robust intrinsic body diode
• Faster commutation and improved switching due to the additional Kelvin source pin

Applications

• E-vehicle charging infrastructure
• Photovoltaic inverters
• Switch mode power supply
• Uninterruptable power supply
• Motor drives

Product portfolio